Product introduction：
Product Introduction
**SI7866DP-T1-GE3-VB** is a high-performance single-tube N-Channel MOSFET in a DFN8 (5X6) package, designed for low on-resistance and high current applications. With a maximum drain-source voltage (V_DS) of 30V, this MOSFET is suitable for efficient power management, power conversion, and applications requiring high current and low power consumption. Its gate threshold voltage (V_th) is 1.7V, and its on-resistance is very low, at 2.5mΩ @ V_GS = 4.5V and 1.8mΩ @ V_GS = 10V, respectively, which can maintain low power consumption and temperature rise in high current applications. The maximum drain current (I_D) is 160A, making it suitable for applications with high current carrying capacity requirements in high power applications. This MOSFET is manufactured based on Trench technology, ensuring its stable performance at high frequency and high load, providing reliable current transmission and thermal management.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
|
1.8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI7866DP-T1-GE3-VB
- **Package**: DFN8(5X6)
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (V_DS)**: 30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 2.5mΩ @ V_GS = 4.5V
- 1.8mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 160A
- **Technology**: Trench technology
Domain and module applications：
Application Areas and Modules
1. **Efficient Power Management and Conversion**:
SI7866DP-T1-GE3-VB is suitable for efficient power management and power conversion applications such as DC-DC converters and AC-DC power adapters. In these applications, the low on-resistance of the MOSFET can reduce power consumption and improve energy efficiency, especially when high current loads need to be handled. The low on-resistance (1.8mΩ @ V_GS = 10V) means that the device can significantly reduce heat loss and ensure stable operation of the system under high loads.
2. **Electric Vehicle (EV) Battery Management System (BMS)**:
In electric vehicles, SI7866DP-T1-GE3-VB can be used in battery management systems (BMS) to efficiently control the charging and discharging process of the battery. Its high current handling capability (160A) and low on-resistance make it very suitable for battery charge and discharge control and battery protection systems in electric vehicles, optimizing battery life and improving the endurance of electric vehicles.
3. **Battery Chargers and Energy Storage Systems**:
SI7866DP-T1-GE3-VB is widely used in battery chargers and energy storage systems, especially in fast charging applications that require high current. It can efficiently control the current during battery charging, prevent overcurrent and overheating, provide battery protection, and reduce energy loss during charging by reducing on-resistance, thereby improving charging efficiency.
4. **Industrial Automation and Power Electronics**:
This MOSFET can be used in various industrial automation systems and power electronics modules, such as motor drives, power supplies, and energy distribution systems. The low R_DS(ON) and high current carrying capacity of SI7866DP-T1-GE3-VB make it suitable for high-efficiency power control, and can maintain stable performance in environments with large load fluctuations.
5. **High-power power tools**:
In high-power power tools, the SI7866DP-T1-GE3-VB provides stable current control for applications requiring high current and low power consumption. It optimizes the power management system of the power tool, ensuring long runtimes even under high loads while reducing power loss and heat generation.
6. **Inverters in solar systems**:
In solar inverters, the SI7866DP-T1-GE3-VB efficiently handles high-current DC current and converts it to AC, making it suitable for the power conversion portion of solar power generation systems. Its low on-resistance reduces energy losses in the system, improving overall system efficiency, and ensuring higher power output and stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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