Product introduction：
SI7862DP-VB MOSFET Product Introduction
**Model:** SI7862DP-VB
**Package Type:** DFN8(5x6)
**Configuration:** Single-N-Channel
**Maximum Drain-Source Voltage (VDS):** 30V
**Maximum Gate-Source Voltage (VGS):** ±20V
**Threshold Voltage (Vth):** 1.7V
**On-Resistance (RDS(ON)):**
- 2.5mΩ@VGS=4.5V
- 1.8mΩ@VGS=10V
**Maximum Drain Current (ID):** 160A
**Technology:** Trench technology
The SI7862DP-VB is a high-performance N-channel MOSFET in a DFN8 (5x6) package for high current and high-efficiency power management and power conversion applications. It has an extremely low on-resistance, which can provide low power loss at high currents, thereby improving the overall efficiency of the system. Its drain current is up to 160A, making it an excellent performer in applications requiring high current and low resistance. The trench technology of this MOSFET further enhances its switching performance and conductivity, and is widely used in DC-DC converters, power tools, electric vehicles, and high-efficiency power management.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
|
1.8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **VDS (drain-source voltage): ** 30V
- The maximum drain-source voltage is 30V, which is suitable for low-voltage power management and switching power supply applications, and can effectively control the current at lower voltages.
- **VGS (gate-source voltage): ** ±20V
- The maximum gate-source voltage is ±20V, which supports common gate drive voltages and is suitable for a variety of power management systems and high-efficiency current control.
- **Vth (threshold voltage): ** 1.7V
- The threshold voltage of this MOSFET is 1.7V, which means that it starts to conduct when the gate-source voltage reaches 1.7V, which is suitable for low-voltage drive applications.
- **RDS(ON) (On-resistance):**
- 2.5mΩ (VGS=4.5V)
- 1.8mΩ (VGS=10V)
- The on-resistance of this MOSFET is very low, ensuring minimal energy loss when current flows, improving the efficiency of the power system and reducing heat generation.
- **ID (Drain Current):** 160A
- With a maximum drain current of 160A, it can withstand extremely large current loads and is particularly suitable for high-current, high-power applications such as power tools, battery management, and high-power power modules.
- **Technology:** Trench
- Using advanced trench technology, it provides low on-resistance, high switching speed and excellent current carrying capacity, and performs well in high-efficiency power conversion and fast switching control.
Domain and module applications：
Application areas and module examples
1. **High-efficiency power conversion (DC-DC converter):**
SI7862DP-VB MOSFET is an ideal choice for high-efficiency power conversion systems, especially in DC-DC converters. Its extremely low on-resistance and high current carrying capacity ensure high efficiency during power conversion, especially when handling higher current loads, which can greatly reduce power losses and improve the overall efficiency of the system.
2. **Power tools:**
In power tools, SI7862DP-VB MOSFET can withstand high current (maximum 160A) and provide fast switching response. This makes it perform well in the battery-driven system of power tools, enabling efficient control of motor drive and rapid response to load changes, thereby improving the power and working efficiency of the tool.
3. **Electric Vehicle Battery Management System (BMS):**
The battery management system (BMS) in electric vehicles (EVs) requires efficient and reliable switch control. The SI7862DP-VB MOSFET has a high drain current capability of 160A, which is suitable for the charge and discharge management of electric vehicle batteries, ensuring that the battery always operates efficiently during the charging and discharging process, reducing energy loss and optimizing battery life.
4. **Battery Charger:**
This MOSFET is very suitable for battery chargers, especially in scenarios requiring fast charging and high-efficiency current control. Its low RDS(ON) characteristics can reduce the heat generated during the charging process, improve charging efficiency, and ensure current stability during the charging process.
5. **Power Factor Correction (PFC) Module:**
In the power factor correction (PFC) circuit, the SI7862DP-VB MOSFET can provide efficient switch control and improve the power factor of the power supply. The low on-resistance characteristics help reduce power loss, thereby improving system efficiency and stability.
6. **LED Driver:**
In LED driver, SI7862DP-VB MOSFET can provide precise current regulation to ensure efficient brightness and long life of LED lamps. Low power loss and high current capability make this MOSFET an ideal choice for LED lighting and other similar applications.
7. **Power Management Module:**
SI7862DP-VB is widely used in different power supply systems, including communications, industrial control and consumer electronic devices, as an efficient switching element in power management modules. Its high current handling capability and low RDS(ON) characteristics make it a key component of many efficient power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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