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SI7842DP-T1-GE3-VB Product details

Product introduction:

1. **Product Introduction (SI7842DP-T1-GE3-VB)**

**SI7842DP-T1-GE3-VB** is a bipolar N+N-Channel power MOSFET in DFN8 (5×6)-B package, designed for high-efficiency power management, switching power supply, battery protection and other applications. This MOSFET has a dual-channel configuration, which can handle two independent N-Channel MOSFETs in one package, thereby simplifying circuit design, reducing the number of components and saving space. With a rated drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 22A, it is very suitable for high-efficiency applications that require high current carrying capacity and low power loss.

SI7842DP-T1-GE3-VB adopts Trench technology and has a low on-resistance (RDS(ON)), which is 18mΩ at VGS=10V and 24mΩ at VGS=4.5V, which can effectively reduce switching losses and heat generation and improve the overall efficiency of the system. This MOSFET is suitable for low-voltage and high-efficiency power conversion, battery management, load switching, motor drive and other fields, especially in high-efficiency systems with strict requirements on power and thermal management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6)-B Dual-N+N 30V 1.7V 22A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6)-B Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6)-B Dual-N+N 30V 1.7V 22A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6)-B Dual-N+N 30V 1.7V 22A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6)-B Dual-N+N
2. **Detailed parameter description**

| **Parameter** | **Description** |
|------------------|------------------------------------------------------------|
| **Model** | SI7842DP-T1-GE3-VB |
| **Package type** | DFN8(5×6)-B |
| **Configuration** | Bipolar N+N-Channel |
| **VDS(Drain-Source Voltage)** | 30V |
| **VGS(Gate-Source Voltage)** | ±20V |
| **Vth(Throw-On Voltage)** | 1.7V |
| **RDS(ON)(On-Resistance)** | 24mΩ(VGS=4.5V) / 18mΩ(VGS=10V) |
| **ID(Drain Current)** | 22A |
| **Technology** | Trench |
| **Rated Power** | Suitable for applications such as efficient power management, battery protection, switching power supplies, motor drives, etc. |
| **Operating temperature range** | -55°C to 150°C |

Domain and module applications:

3. **Application fields and module examples**

#### 1) **High-efficiency power management and DC-DC converters**
SI7842DP-T1-GE3-VB is very suitable for high-efficiency power management systems, especially in DC-DC converters. Its low on-resistance and high current capability enable it to effectively improve power conversion efficiency. With its dual N-Channel configuration, this MOSFET can handle multiple current paths in one package, thereby reducing the number of external components and system complexity, and is particularly suitable for low-voltage, high-efficiency power conversion and battery-powered systems.

#### 2) **Battery Management System (BMS)**
In a battery management system (BMS), SI7842DP-T1-GE3-VB is an ideal switching element that can efficiently control the charging and discharging process of the battery, especially in applications such as electric vehicles, power tools, and portable devices. Its low RDS(ON) and high current carrying capacity ensure that the battery management system can operate with high efficiency and low power loss, and can effectively prevent risks such as battery overvoltage, overcurrent or overheating.

#### 3) **Load Switch and Power Protection**
SI7842DP-T1-GE3-VB can also be used in load switch applications, enabling fast and efficient switching under high current loads. Its high current handling capability and low on-resistance make it particularly suitable for power protection and load switching modules, providing more precise current control and lower power loss, avoiding power waste and circuit damage caused by load overload, and is suitable for industrial automation, power monitoring and protection systems.

#### 4) **Motor Drive and Motor Control**
In motor drive applications, SI7842DP-T1-GE3-VB can be used for efficient driving of brushless DC motors (BLDC) and stepper motors, especially in motor control modules that require high efficiency and high current handling. Due to its low RDS(ON) and high switching speed, MOSFET can effectively reduce power loss in motor drive and improve the operating efficiency and stability of the system. Common applications include industrial automation, robotics, power tools and home appliances.

#### 5) **Automotive electronics and power distribution**
In the field of automotive electronics, SI7842DP-T1-GE3-VB can be used as a switching element in power distribution and power conversion modules. Its dual N-Channel configuration enables efficient current control in the on-board power management system, which is suitable for battery management, on-board chargers, power windows, power seats and other modules in electric vehicles (EV) and traditional vehicles, providing higher power distribution efficiency and more reliable system performance.

#### 6) **Integrated power system**
The dual-channel configuration of this MOSFET is very suitable for integrated power systems, especially in applications with limited space and number of components. It can handle multiple current paths at the same time, simplify the design, save space, and is widely used in various high-efficiency power control systems, such as portable consumer electronics, mobile devices, power conversion and energy storage systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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