Product introduction：
**SI7806DN-T1-GE3-VB MOSFET Product Introduction**
SI7806DN-T1-GE3-VB is a unipolar N-channel MOSFET based on Trench technology, packaged in DFN8 (3x3) package, designed for low-voltage high-efficiency switching applications. With a drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 30A, this MOSFET is suitable for a variety of low-power power management and load switching applications. It has a low on-resistance (RDS(ON)), which is 13mΩ at VGS=10V and 19mΩ at VGS=4.5V, which gives it a significant advantage in achieving efficient power conversion and low power loss. SI7806DN-T1-GE3-VB is widely used in power modules, load switches and other current control applications, providing stable and reliable performance, and is suitable for fields such as efficient power conversion and battery management.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
|
13mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
**SI7806DN-T1-GE3-VB MOSFET detailed parameter description**
- **Model**: SI7806DN-T1-GE3-VB
- **Package**: DFN8 (3x3)
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Technology**: Trench
- **Maximum power dissipation**: 60W (depending on environmental and cooling conditions)
- **Maximum Gate Charge (Qg)**: 15nC
- **Maximum Drain Charge (Qd)**: 45nC
- **Operating Temperature Range**: -55°C to +150°C
- **Input Capacitance (Ciss)**: 1800pF (typical)
SI7806DN-T1-GE3-VB offers low on-resistance and stable performance at high currents, making it suitable for multiple high-performance applications such as battery management, power conversion and load switching.
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Domain and module applications：
**SI7806DN-T1-GE3-VB MOSFET application areas and module examples**
1. **Power management and voltage conversion modules**
SI7806DN-T1-GE3-VB is widely used in power management modules and voltage converters (such as DC-DC converters) due to its low on-resistance and high current carrying capacity. Its efficient switching performance helps reduce power loss and improve power conversion efficiency, and is particularly suitable for mobile devices, power adapters, and battery-powered devices.
2. **Battery Management System (BMS)**
In the battery management system, SI7806DN-T1-GE3-VB provides efficient current switching capabilities for battery charging and discharging management. It can be used in electric vehicles, portable electronic devices, and energy storage systems to ensure stable and reliable operation of the system through efficient current control.
3. **Power tools and home appliances applications**
SI7806DN-T1-GE3-VB MOSFET is suitable for power switching, load switch control and other applications in power tools and home appliances. Its low on-resistance (13mΩ @ VGS=10V) can effectively reduce power loss in current control, thereby improving the efficiency and stability of the overall system, especially in high-power applications that require frequent switching.
4. **Automotive electronic modules**
In the field of automotive electronics, especially electric vehicles and hybrid vehicles, SI7806DN-T1-GE3-VB is used in key parts such as battery management systems, electric drive systems, and charging management modules. In these applications, this MOSFET provides high-efficiency support for battery charging, power conversion, and load control, helping to improve the endurance and energy efficiency of electric vehicles.
5. **Load switching and power distribution systems**
Due to its high current carrying capacity, SI7806DN-T1-GE3-VB is suitable for use in load switching and power distribution systems. In these systems, MOSFETs can be used to quickly switch loads and achieve efficient current distribution, and are widely used in power modules, communication equipment, and high-power electronic devices.
6. **Adjustable power supply and load regulation module**
SI7806DN-T1-GE3-VB can be used in adjustable power supply and load regulation modules to help accurately adjust current output, especially in applications that require low power consumption and high efficiency. Its excellent switching performance and low on-resistance make it outstanding in these modules, suitable for precision power regulation and dynamic load control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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