Product introduction：
**
SI7794DP-T1-GE3-VB is a high-performance single N-channel MOSFET in DFN8 (5X6) package, designed for low voltage, high current, high efficiency power management systems. It has excellent switching performance, extremely low on-resistance and high current carrying capacity, suitable for applications requiring miniaturization, high efficiency and low power consumption. The maximum leakage current of this MOSFET can reach 120A, and the operating voltage is 30V, which is particularly suitable for high-efficiency power conversion, load switching and battery management.
**
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
**
- **Package**: DFN8 (5X6)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ@VGS=4.5V
- 3mΩ@VGS=10V
- **Maximum leakage current (ID)**: 120A
- **Technology type**: Trench
**
Domain and module applications：
Examples**
SI7794DP-T1-GE3-VB is suitable for multiple high-efficiency power applications, especially in **power management systems**, where its low on-resistance can minimize power consumption and heat generation during power conversion. For example, it can be used in **DC-DC converters** to provide high-efficiency voltage conversion, especially for power modules of mobile devices, power tools, and portable power supplies.
In **battery management systems (BMS)**, this MOSFET can efficiently manage the charging and discharging process of the battery to ensure battery safety and long life. Due to its high current carrying capacity, it is also very suitable for occasions that require high-current switching, such as power management systems and **motor drive** modules in electric vehicles, providing efficient and stable power supply.
In addition, SI7794DP-T1-GE3-VB is also very suitable for **smart home devices**, especially for the drive circuit of brushless DC motors (BLDC), helping to optimize energy consumption and improve the response speed and stability of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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