Product introduction：
**SI7758DP-VB MOSFET Product Introduction**
SI7758DP-VB is a unipolar N-channel MOSFET based on Trench technology, packaged in DFN8 (5x6). This MOSFET has excellent low on-resistance and high current carrying capability, with a drain-source voltage (VDS) of 30V and can withstand a drain current (ID) of up to 120A. At VGS = 10V, the on-resistance of SI7758DP-VB is 3mΩ, further improving switching efficiency and reducing power loss. Its gate threshold voltage (Vth) is 1.7V, which is suitable for low-voltage drive applications. This MOSFET is mainly used in multiple fields such as high-efficiency power management, power tools, battery management, and load switches. It can provide reliable performance and excellent thermal management in high-frequency, high-current applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
**SI7758DP-VB MOSFET detailed parameter description**
- **Model**: SI7758DP-VB
- **Package**: DFN8 (5x6)
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON)）**:
- 5mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
- **Maximum power dissipation**: 90W (depending on the operating environment and cooling conditions)
- **Maximum gate charge (Qg)**: 40nC
- **Maximum drain charge (Qd)**: 100nC
- **Operating temperature range**: -55°C to +150°C
- **Input capacitance (Ciss)**: 3000pF (typical)
SI7758DP-VB offers low on-resistance, especially suitable for high current switching applications. At VGS=10V, the RDS(ON) value is only 3mΩ, with very high current carrying capability, suitable for battery-driven devices, power conversion and current management applications.
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Domain and module applications：
**SI7758DP-VB MOSFET application areas and module examples**
1. **Power management and voltage conversion modules**
The low RDS(ON) and high current capability of SI7758DP-VB make it very suitable for use in efficient power management and voltage conversion modules. It can withstand drain currents up to 120A and is suitable for applications such as DC-DC converters and power distribution systems to help achieve low-loss, high-efficiency power conversion.
2. **Battery Management System (BMS)**
In the battery management system (BMS), SI7758DP-VB can efficiently control battery charging and discharging. Its low on-resistance (3mΩ@VGS=10V) and high current capability ensure the accuracy and stability of battery current management, and is particularly suitable for use in electric vehicles, energy storage systems and other fields.
3. **Power tools and home appliance switching systems**
In power tools, power equipment and home appliances, SI7758DP-VB MOSFET can be used for efficient load switching and current regulation, providing stable current control and efficient power conversion, reducing switching losses, thereby extending battery life and improving the overall efficiency of the system.
4. **Automotive electronics and electric vehicle applications**
In electric vehicles (EV) and hybrid electric vehicles (HEV), SI7758DP-VB can be used for electric drive systems, power conversion and efficient battery management. Due to its excellent current carrying capacity and low on-resistance, this MOSFET has important applications in battery charging and discharging, drive circuits and power conversion systems of electric vehicles.
5. **Power amplifier and RF applications**
SI7758DP-VB is suitable for power amplifier and RF applications due to its high efficiency and low on-resistance, especially in the field of high-frequency switching and power control. It can ensure the stability and performance of the system at higher frequencies and high-power loads, and is widely used in wireless communications, RF amplifiers and other equipment.
6. **Adjustable power supply and load regulation module**
In high-power power supply and load regulation systems, SI7758DP-VB MOSFET can effectively reduce system heat loss and improve current regulation accuracy due to its lower RDS(ON) and high current capability. This MOSFET can be used in various modules that require efficient current regulation and load control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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