Product introduction:
Product Introduction
**SI7491DP-T1-GE3-VB** is a single P-channel **MOSFET** in a **DFN8(5X6)** package, suitable for medium and high voltage applications requiring high current and low on-resistance. This MOSFET has a **maximum drain-source voltage (V_DS) of -30V**, can withstand large load currents, and has a maximum drain current of -60A. Its **on-resistance** is very low, at **12mΩ** at a gate-source voltage **V_GS = 4.5V** and **7.8mΩ** at **V_GS = 10V**, which means that this MOSFET can effectively reduce power loss and heat generation when operating at high currents.
This MOSFET uses **Trench technology** to optimize switching speed and efficiency, making it ideal for efficient power management, load switches, power tools, and automotive electronic systems. With its low on-resistance and high current handling capability, the SI7491DP-T1-GE3-VB delivers high performance and efficiency in battery management systems, electric drive systems, and high-efficiency power conversion applications.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-2.5V |
-60A |
|
|
7.8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-2.5V |
-60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-2.5V |
-60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: DFN8(5X6)
- **Configuration**: Single P channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2.5V
- **On-resistance (R_DS(on))**:
- 12mΩ @ V_GS = 4.5V
- 7.8mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: -60A
- **Technology**: Trench technology
- **Maximum power loss**: Suitable for high-efficiency power switching and power conversion applications
- **Operating temperature range**: Wide range of industrial and consumer application environments
Domain and module applications:
Applicable fields and modules
**1. Battery Management System (BMS)**
**SI7491DP-T1-GE3-VB** is suitable for battery management systems, especially in power tools, electric vehicles and other rechargeable devices. In these applications, the low on-resistance enables it to efficiently control the current, reduce power loss and heat generation in the system, thereby improving energy efficiency and extending battery life. Due to its high current carrying capacity, this MOSFET is very suitable for providing stable control during battery charging and discharging, especially in the battery management system of electric vehicles, ensuring safe and efficient charging and discharging processes.
**2. Efficient power conversion and DC-DC converters**
This MOSFET is widely used in **DC-DC converters** and other power management modules, especially in power conversion applications that require high efficiency. Its low on-resistance and high current carrying capacity make it an ideal choice for power conversion applications, which can significantly improve conversion efficiency and reduce power losses. For power systems of industrial power supplies, power adapters, and power tools, **SI7491DP-T1-GE3-VB** can effectively reduce energy loss and optimize system performance.
**3. Electric drive systems and automotive electronics**
**SI7491DP-T1-GE3-VB** plays an important role in **electric drive systems**, especially in the power control systems of electric vehicles and hybrid vehicles. Its low on-resistance and high current carrying capacity can help control the power flow in the motor drive system, thereby improving the drive efficiency and reducing the energy loss of the system. In applications such as power tools and electric bicycles, this MOSFET can also provide excellent performance and efficient current control.
**4. Efficient power switch and load control**
As an efficient power switch, **SI7491DP-T1-GE3-VB** is suitable for **high power load control** applications. It can stably switch load current and control power flow. This makes it widely used in industrial control, load switching, and intelligent power management modules. In automation equipment, motor control, inverters and other equipment, **SI7491DP-T1-GE3-VB** provides efficient and stable performance to help achieve intelligent power management and load switching.
**5. Automotive power management and solar energy systems**
**SI7491DP-T1-GE3-VB** is also widely used in **automotive power management systems**, especially in the charging and power distribution modules of electric vehicles. It can effectively regulate and control the battery charging and discharging process to ensure the stability of electric vehicles under different working conditions. In addition, it can also be used in the inverter system of solar panels. As an efficient power switch, it can improve the charging and discharging efficiency of the battery and ensure the maximum utilization of the system energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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