Product introduction：
**SI7464DP-T1-GE3-VB MOSFET Product Introduction**
**Model**: SI7464DP-T1-GE3-VB
**Package Type**: DFN8(5X6)
**Configuration**: Single-N-Channel
**Maximum Drain-Source Voltage (VDS)**: 200V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 3V
**On-Resistance (RDS(ON))**: 38mΩ@VGS=10V
**Maximum Drain Current (ID)**: 30A
**Technology**: Trench
SI7464DP-T1-GE3-VB It is a high-voltage, high-current N-channel MOSFET that uses advanced Trench technology and is designed for high-efficiency power supplies and switching circuits. With a maximum drain-source voltage of 200V and a drain current of 30A, the MOSFET can withstand high voltage and high current loads. Its low on-resistance (38mΩ@VGS=10V) can effectively reduce energy loss, and its efficient switching characteristics are suitable for efficient power management, power conversion, and high current applications. It is suitable for various power modules in power systems, industrial equipment, electric vehicles, and communication equipment, providing reliable performance and excellent power conversion efficiency.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
200V |
|
3V |
30A |
|
|
38mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
200V |
|
3V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
200V |
|
3V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
**SI7464DP-T1-GE3-VB MOSFET Detailed Parameter Description**
- **Package Type**: DFN8(5X6)
- The DFN8 package has excellent thermal performance and a compact form factor, making it suitable for high-power applications that require space saving and can effectively dissipate heat.
- **Configuration**: Single-N-Channel
- N-channel MOSFETs typically have lower on-resistance and higher current carrying capacity, making them suitable for high-current applications, and can provide fast switching characteristics and higher efficiency.
- **VDS (drain-source voltage)**: 200V
- The maximum drain-source voltage is 200V, which is suitable for high-voltage applications such as power management, DC-DC converters and other power systems.
- **VGS (gate-source voltage)**: ±20V
- The operating range of the gate voltage is ±20V, ensuring that it is suitable for most control circuits and switch modules.
- **Vth (threshold voltage)**: 3V
- The threshold voltage is 3V, which means that when the gate voltage reaches 3V, the MOSFET will start to turn on, which is suitable for low-voltage drive circuits.
- **RDS(ON) (on-resistance)**: 38mΩ@VGS=10V
- At VGS=10V, the on-resistance is 38mΩ. The lower on-resistance can effectively reduce energy loss and heat generation, and improve overall efficiency.
- **ID (drain current)**: 30A
- The maximum drain current is 30A, which can support high current loads and is suitable for applications that require high current handling, such as electric vehicle battery management and power modules.
- **Technology**: Trench
- Trench technology can reduce on-resistance and switching losses, improve efficiency and enhance the reliability of MOSFET, especially for high-power applications.
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Domain and module applications：
**Application fields and modules of SI7464DP-T1-GE3-VB MOSFET**
1. **High voltage power management system**
SI7464DP-T1-GE3-VB is very suitable for high voltage power management systems, such as DC-DC converters, AC-DC power converters, and battery charging systems. Its 200V drain-source voltage and 30A current capability enable it to perform well in high-power power conversion, reduce energy loss, and ensure efficient operation of the system.
2. **Electric Vehicles (EV) and Battery Management Systems (BMS)**
In electric vehicles and battery management systems, SI7464DP-T1-GE3-VB can be used as a key switching element in battery charging, discharging control, and battery protection circuits. The high current carrying capacity and efficient switching characteristics of MOSFET can ensure the stability of the battery during charging and discharging, optimize battery management, and extend battery life.
3. **Industrial control systems**
SI7464DP-T1-GE3-VB can be widely used in motor drive and high-power load control in industrial automation systems. Its 30A current capability and low on-resistance can provide stable drive current for the motor, ensuring efficient operation of the system, and is particularly suitable for industrial power supply and variable frequency drive applications.
4. **Solar inverter and renewable energy system**
In solar inverter and other renewable energy power conversion systems, SI7464DP-T1-GE3-VB MOSFET can help improve energy conversion efficiency and system reliability. The high voltage and high current carrying capacity of MOSFET enables it to withstand the high current loads that appear in the inverter and maintain a stable output.
5. **Communication equipment power module**
Power modules in communication equipment usually require efficient power conversion and stable current output. SI7464DP-T1-GE3-VB is suitable for these power modules, which can handle large current loads and effectively improve the performance and reliability of the equipment and reduce energy loss.
6. **High-efficiency LED drive circuit**
As the core switch component of the LED drive circuit, SI7464DP-T1-GE3-VB can provide precise current control to ensure efficient operation of the LED system. Its low on-resistance and high switching speed make it suitable for high-efficiency LED lighting systems to increase brightness and reduce energy consumption.
7. **High-power battery protection circuit**
In the high-power battery protection circuit, SI7464DP-T1-GE3-VB can provide effective over-current protection and efficient current management to ensure the stability of the battery during charging and discharging, and prevent overcharging and over-discharging.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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