Product introduction：
1. Product Introduction
SI7462DP-T1-GE3-VB is a unipolar N-channel MOSFET in DFN8 (5x6) package, suitable for high-efficiency power management and switching applications. The device has a drain-source voltage (VDS) of 200V, a gate-source voltage (VGS) of 20V, a threshold voltage (Vth) of 3V, and an on-resistance of 38mΩ (RDS(ON)@VGS=10V). Its maximum drain current (ID) is 30A, which is suitable for use in high-power applications. The MOSFET uses Trench technology, which gives it low on-resistance and high switching efficiency, which can effectively reduce system power consumption and improve overall performance.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
200V |
|
3V |
30A |
|
|
38mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
200V |
|
3V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
200V |
|
3V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Model**: SI7462DP-T1-GE3-VB
- **Package type**: DFN8 (5x6)
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 38mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Technology**: Trench (trench technology)
- **Application areas**: Suitable for power switches, power management, load switches, DC-DC converters, etc.
- **Maximum power dissipation**: Related to the temperature and heat dissipation conditions of the working environment.
- **Operating temperature range**: -55°C to +150°C (typical operating range depends on cooling conditions)
- **Maximum leakage current**: 30A, suitable for high current loads.
Domain and module applications：
3. Product application areas and module examples
**Area 1: Power management system**
In power management systems, SI7462DP-T1-GE3-VB is widely used as a switching element in DC-DC converters (such as boost and buck converters) and battery-powered devices. Its low on-resistance (38mΩ) enables it to exhibit low power loss under high current loads, thereby improving the efficiency of the entire system. For example, in automotive power management systems, MOSFETs can be used for efficient battery charging and power distribution.
**Area 2: Power tools and electric vehicle (EV) drive systems**
For motor drive systems in power tools and electric vehicles, SI7462DP-T1-GE3-VB has high current carrying capacity (30A) and high switching frequency, enabling efficient motor drive. It can be used in motor control circuits to provide stable and efficient current conversion. The low RDS(ON) value ensures low heat loss under high power loads, improving the stability and reliability of the system.
**Field 3: Load switch and smart home system**
In smart home and automation systems, SI7462DP-T1-GE3-VB MOSFET can be used as a load switch to control the start and stop of the power supply. In low-power devices, it can provide higher switching efficiency and lower static power consumption, and is suitable for applications such as lighting, temperature control and smart sockets. For example, it can control the switching of household appliances, optimize power consumption, and can be remotely monitored and operated through intelligent control systems.
**Field 4: Industrial power supply and battery management system**
The high drain-source voltage (VDS=200V) of this MOSFET makes it very suitable for industrial-grade power supply systems and battery management systems (BMS). In battery charge and discharge control and battery protection circuits, MOSFET plays an important role, which can effectively regulate the battery charging process, avoid overcharging or over-discharging, and improve battery life.
Through these application cases, it can be seen that SI7462DP-T1-GE3-VB is a MOSFET that is very suitable for efficient switching and power management, and is widely used in high current and high voltage control applications in various industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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