Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1.8V |
30A |
|
|
17mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1.8V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1.8V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
**SI7454DP-T1-GE3-VB MOSFET Detailed Parameter Description**
- **Package Type**: DFN8(5X6)
- DFN8 (5x6mm) package provides better thermal conductivity and smaller footprint, suitable for high-power, high-density integration applications.
- **Configuration**: Single-N-Channel
- N-channel MOSFET has lower switching losses and is suitable for high-current load applications. Its on-resistance decreases with increasing gate voltage, providing efficient power transmission.
- **VDS (drain-source voltage)**: 100V
- The maximum drain-source voltage of this MOSFET is 100V, which is suitable for most medium and high voltage power supplies and power conversion applications, and supports reliable operation in high voltage environments.
- **VGS (gate-source voltage)**: ±20V
- Supports gate-source voltage of ±20V, suitable for efficient driving and switching control, and is compatible with most common driving circuits.
- **Vth (threshold voltage)**: 1.8V
- The threshold voltage is 1.8V, which means that when the gate voltage reaches or exceeds this value, the MOSFET will start to turn on. Suitable for low-voltage drive systems.
- **RDS(ON) (on-resistance)**: 17mΩ @VGS=10V
- At VGS=10V, the on-resistance is 17mΩ, and the extremely low on-resistance helps reduce power loss and improve the efficiency of the system.
- **ID (drain current)**: 30A
- The maximum drain current of the MOSFET is 30A, which is suitable for applications requiring large currents and provides sufficient current capacity to cope with high power loads.
- **Technology**: Trench
- Trench technology enables this MOSFET to have low on-resistance and high switching efficiency, as well as good thermal performance and high current carrying capacity, making it suitable for high-performance applications.
---
Domain and module applications：
**Application fields and modules of SI7454DP-T1-GE3-VB MOSFET**
1. **Switching Power Supply (SMPS) and Power Management**
SI7454DP-T1-GE3-VB is particularly suitable for switching power supply (SMPS) and power management system due to its low on-resistance and high current carrying capacity. This MOSFET can be used in power modules such as DC-DC converters and AC-DC converters to help reduce losses and improve efficiency, ensuring high efficiency during long-term operation.
2. **Battery Management System (BMS) and Electric Vehicles (EV)**
In the battery management system (BMS), SI7454DP-T1-GE3-VB can provide efficient current switching, which is particularly suitable for battery charging and discharging control in electric vehicles and renewable energy systems. Its high efficiency and high current handling capability enable it to maintain low losses during battery charging and energy recovery.
3. **Industrial Motor Drive and Automation System**
This MOSFET is suitable for various industrial motor drive systems, especially in applications that require fast switching and high current control, providing high efficiency and stable performance. For example, SI7454DP-T1-GE3-VB can be used in high-efficiency switching modules in DC motor, stepper motor and servo motor control systems.
4. **DC-DC Converter and Inverter**
In inverters and DC-DC converters, SI7454DP-T1-GE3-VB provides high current carrying capacity and low on-resistance, which can optimize power conversion efficiency, and is particularly suitable for the design of solar inverters, communication equipment power modules and other high-efficiency power modules.
5. **High-efficiency LED drive circuit**
In LED drive circuits, SI7454DP-T1-GE3-VB can effectively drive LED loads and reduce energy loss. Due to its low RDS(ON) and high current capacity, it can ensure efficient current regulation and less heat generation, and is suitable for various LED lighting and display applications.
6. **Consumer Electronics**
SI7454DP-T1-GE3-VB is also suitable for power management of various consumer electronics products, such as battery charging systems of devices such as smartphones and tablets. Its high performance ensures continuous and efficient charging of devices during long-term use.
7. **Power Electronic Equipment**
In power electronic equipment, SI7454DP-T1-GE3-VB is able to cope with high current demands, especially in high-efficiency power conversion applications. Its excellent current handling capability and efficient switching performance ensure the stability and efficiency of power equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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