Product introduction:
Product Introduction
**SI7454CDP-T1-GE3-VB** is a high-performance single N-channel MOSFET in a **DFN8(5X6)** package, designed for applications such as high-efficiency power management, load switching and power conversion. With a maximum drain-source voltage (V_DS) of 100V and a maximum drain current (I_D) of 30A, this MOSFET is suitable for medium and high voltage power systems. Its **Trench technology** provides a lower on-resistance (R_DS(on) is 17mΩ @V_GS=10V), which enables the MOSFET to have lower power loss under high current load, improving the energy efficiency and reliability of the system.
In addition, SI7454CDP-T1-GE3-VB has a high voltage withstand capability (100V) and can operate stably over a wide operating voltage range, making it suitable for power conversion, load switching, battery management and electric drive. Its excellent switching characteristics and low conduction losses make it an ideal choice for high-efficiency power supplies and power modules.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1.8V |
30A |
|
|
17mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1.8V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
1.8V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: DFN8(5X6)
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 100V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.8V
- **On-resistance (R_DS(on))**: 17mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 30A
- **Technology**: Trench technology
- **Maximum power loss**: Suitable for efficient power management, load switching, power conversion
- **Operating temperature range**: Suitable for various industrial and consumer electronics applications
Domain and module applications:
Product application areas and modules
**1. High-efficiency power conversion and DC-DC converters: **
**SI7454CDP-T1-GE3-VB** is widely used in **DC-DC converters** and high-efficiency power conversion systems. Due to its low R_DS(on) and high current carrying capacity, this MOSFET is ideal for power management systems that require high conversion efficiency and high current load. It can be widely used in applications such as battery-driven devices, power adapters, chargers, etc., to ensure efficient conversion and management of electrical energy and reduce energy loss.
**2. Electric vehicles and battery management systems (BMS): **
In **battery management systems (BMS), **SI7454CDP-T1-GE3-VB** is suitable for battery charge and discharge control. Its high voltage tolerance and high current carrying capacity make it an ideal choice for electric vehicles and other high-power battery systems. This MOSFET can efficiently switch and distribute current in the battery pack, ensuring the stability and efficiency of system operation. By reducing power loss, it can also extend battery life and improve overall energy efficiency.
**3. Electric drive systems and power tools: **
**SI7454CDP-T1-GE3-VB** is suitable for various **electric drive systems**, such as power tools, electric bicycles and electric scooters. Due to its excellent conduction characteristics and low on-resistance, it can operate stably under these high current load conditions and effectively reduce heat loss. In the drive systems of power tools and electric vehicles, it can provide efficient power conversion and improve the performance and service life of the equipment.
**4. Load Switch and Power Management: **
This MOSFET can be used in **load switch** applications, where it is necessary to control the flow of large currents and provide stable switching performance. In **power management systems**, it can be used for applications such as power switching, power distribution, and overcurrent protection. The low R_DS(on) feature enables it to have lower power loss in the power distribution system, ensuring the efficiency and stability of the system.
**5. Industrial control and communication equipment: **
**SI7454CDP-T1-GE3-VB** is also widely used in **industrial automation control** and **communication equipment**. In industrial equipment, it can stably control the flow of current and provide efficient power conversion, especially in situations where high power and high voltage control are required. It is also suitable for high-efficiency power systems such as communication base stations and data centers to ensure efficient operation and low energy consumption of equipment.
In general, **SI7454CDP-T1-GE3-VB** is an efficient and low-loss MOSFET that is widely used in power management, battery management, electric drive, and industrial and consumer electronics. It can help the system reduce energy loss and improve efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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