Product introduction：
SI7446BDP-T1-GE3-VB MOSFET Product Introduction
SI7446BDP-T1-GE3-VB is a high-efficiency single N-channel MOSFET in DFN8 (5x6) package, suitable for low voltage, high current, high frequency applications. The drain-source voltage (VDS) of this MOSFET is 30V, the gate-source voltage (VGS) is ±20V, and the gate threshold voltage (Vth) is 1.7V, which is suitable for starting at a lower drive voltage. Its on-resistance is extremely low, 9mΩ at VGS = 4.5V and 7mΩ at VGS = 10V, which can effectively reduce power loss and improve current conduction efficiency. The maximum drain current (ID) is 80A, which is suitable for handling larger current loads. SI7446BDP-T1-GE3-VB adopts deep trench technology, which has the advantages of low on-resistance and low switching loss. It is particularly suitable for high frequency and high power density application scenarios, providing higher system efficiency and reliability.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
SI7446BDP-T1-GE3-VB MOSFET Detailed parameter description
- **Package**: DFN8 (5x6)
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench (deep trench technology), by reducing on-resistance and switching loss, improve current conduction efficiency and system stability.
Domain and module applications：
SI7446BDP-T1-GE3-VB MOSFET Applications and Modules
1. **High-efficiency power conversion and power management**:
SI7446BDP-T1-GE3-VB is an efficient power management component, especially suitable for various power conversion systems. Its low on-resistance makes it extremely efficient in applications such as DC-DC converters and buck converters, which can effectively reduce energy losses and improve power conversion efficiency. It is particularly suitable for high-efficiency power modules that require high current density and small size design.
2. **Battery Management System (BMS)**:
In battery management systems, especially in electric vehicles (EV) and battery energy storage systems, SI7446BDP-T1-GE3-VB MOSFET acts as an efficient switch to manage the battery charging and discharging process. Its low RDS(ON) improves battery charging and discharging efficiency, reduces heat generation and power loss, enhances the performance of the battery management system, and extends the battery life.
3. **Power Tools and Motor Drives**:
This MOSFET performs well in power tools and motor drive systems, especially for brushless DC motor (BLDC) drives. It can provide stable power output and effectively reduce power consumption in power tools, improve the response speed and efficiency of motors, and is an ideal choice for modern power tools.
4. **Electric Vehicles (EV/HEV)**:
SI7446BDP-T1-GE3-VB is suitable for motor drives and battery management systems in electric vehicles (EV) and hybrid electric vehicles (HEV). This MOSFET can withstand high current loads and support efficient power conversion and energy management. Low on-resistance and high current capability make it an ideal switching element in automotive power systems.
5. **Communication Equipment and Network Equipment**:
In communication equipment and network equipment, SI7446BDP-T1-GE3-VB can be used for efficient power management, especially in high frequency and high power density applications. Its low RDS(ON) and high current handling capability make it suitable for use in various communication base stations, data centers, and server power modules.
6. **High Power Density Inverter and Solar System**:
SI7446BDP-T1-GE3-VB can be used in high power density inverter applications, especially in solar photovoltaic systems. In the inverter, MOSFET plays a key power conversion role. The high efficiency and low loss of SI7446BDP-T1-GE3-VB help improve the overall performance of the photovoltaic power generation system, reduce energy loss during the conversion process, and improve the power generation efficiency of the system.
7. **Load Switch and Power Management**:
This MOSFET is also suitable for load switches and power management systems, especially in load switch applications that require high current control, such as industrial automation, power adapters, smart home devices, etc. It can efficiently transmit current and reduce energy losses in load switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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