Product introduction:
Product Introduction
**SI7344DP-T1-GE3-VB** is a single N-channel power MOSFET in a **DFN8(5X6)** package. It combines high current capability with low on-resistance and is particularly suitable for high-power power systems that require efficient switching performance. This MOSFET uses **Trench technology** to provide low switching losses, fast response and efficient power conversion, and is widely used in multiple low to medium voltage power management systems.
The maximum drain-source voltage (V_DS) of this MOSFET is **30V** and the maximum drain current (I_D) is **80A**, making it suitable for high current loads and low voltage applications such as **power converters, load switches, battery management systems**, etc. Its low **R_DS(on)** (9mΩ at V_GS=4.5V, 7mΩ at V_GS=10V) can effectively reduce power losses and improve overall efficiency, especially in high switching frequency environments, with lower heat losses.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: DFN8(5X6)
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(on))**:
- 9mΩ @ V_GS = 4.5V
- 7mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 80A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power loss**: Suitable for efficient power applications
- **Typical applications**: High-efficiency power conversion, load switching, battery management, power tools, etc.
Domain and module applications:
Product application areas and modules
**1. Power converter and DC-DC converter: **
**SI7344DP-T1-GE3-VB**'s low R_DS(on) and high current capability make it particularly suitable for high-efficiency power conversion applications such as **DC-DC converter** and **AC-DC power converter**. It can significantly reduce power loss and temperature rise in these applications, providing higher efficiency. Whether it is a high-frequency switching power supply or a power management system, it can perform well, especially in situations where large current loads need to be handled to ensure stable output.
**2. Battery Management System (BMS): **
In battery management systems, especially in electric vehicles (EVs), power tools, and portable electronics, **SI7344DP-T1-GE3-VB** MOSFET can be used for battery charge and discharge management. Low on-resistance and high current handling capability keep energy loss low during high current charging and discharging, providing higher system efficiency. It also ensures stable operation under extreme working conditions to avoid damage caused by overheating or overload.
**3. Power tools and electric drive systems: **
In power tools and electric drive systems, **SI7344DP-T1-GE3-VB** provides reliable high-current handling capabilities, which can achieve fast and efficient power conversion. This makes it very suitable for scenarios such as power tools, electric bicycles, and electric vehicle drive systems. It can withstand high starting currents and play a key role in the system to improve overall performance.
**4. Consumer electronics and smart devices: **
In consumer electronics and smart devices, **SI7344DP-T1-GE3-VB** can be used in power management systems such as smartphones, portable speakers, and LED drivers. The high-efficiency performance of MOSFET enables these devices to maintain low power operation under high loads and long-term use, optimize battery life, and provide a better user experience.
**5. High-efficiency load switch applications: **
Due to its excellent on-resistance and high current capability, **SI7344DP-T1-GE3-VB** is particularly suitable for load switch applications, which can maintain a low voltage drop under high current load and improve the overall efficiency of the system. It is widely used in power supply, DC load switching, overload protection and other modules, and plays an important role in various industrial equipment, home appliances and consumer electronics.
In short, **SI7344DP-T1-GE3-VB** is a MOSFET suitable for high current and high efficiency applications, which can meet the needs of various fields from power management to electric drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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