Product introduction:
SI7336DP-T1-GE3-VB MOSFET Product Introduction
**SI7336DP-T1-GE3-VB** is a high-performance single N-channel MOSFET with **Trench technology** and a **DFN8 (5x6)** package, suitable for high current and high power applications. This MOSFET has a **maximum drain-source voltage** (VDS) of **30V**, suitable for low voltage power supplies and drive circuits. Its **threshold voltage** (Vth) is **1.7V**, which can be switched at a lower gate voltage, thus simplifying the drive requirements. The **on-resistance** (RDS(ON)) of the MOSFET is **7mΩ** at a gate voltage of **10V** and **9mΩ** at a gate voltage of **4.5V**, providing low loss and high efficiency switching performance. The **maximum drain current** (ID) of the device is **80A**, suitable for high power applications, and can meet stringent high current and high efficiency requirements.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
SI7336DP-T1-GE3-VB MOSFET Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|------------------|-----------------------|---------------------------------------------|
| **Model** | SI7336DP-T1-GE3-VB | |
| **Package** | DFN8 (5x6) | Compact surface mount package for high current and high power applications|
| **Configuration** | Single N-channel | High-performance single N-channel structure for high current and low voltage applications|
| **VDS** | 30V | Maximum drain-source voltage is 30V, suitable for low voltage power systems|
| **VGS** | ±20V | Gate-source voltage range is ±20V, supporting standard gate drive voltage|
| **Vth** | 1.7V | Threshold voltage is 1.7V, suitable for low voltage gate drive applications|
| **RDS(ON)** | 9mΩ@VGS=4.5V | On resistance at gate voltage 4.5V|
| **RDS(ON)** | 7mΩ@VGS=10V | On resistance at gate voltage 10V|
| **ID** | 80A | Maximum drain current is 80A, suitable for high current loads|
| **Technology** | Trench technology | High-efficiency trench technology reduces switching loss and on resistance|
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Domain and module applications:
SI7336DP-T1-GE3-VB MOSFET Applicable fields and modules
**1. Power management and DC-DC converters: **
- **SI7336DP-T1-GE3-VB** MOSFET is widely used in **power management systems**, especially in **DC-DC converters**, to improve power conversion efficiency. This MOSFET has a low **RDS(ON)** (7mΩ at 10V gate voltage), which can significantly reduce switching losses and improve system efficiency. It is particularly suitable for low to medium voltage (30V) power modules, and can provide stable and reliable power conversion in power supply equipment.
**2. Power tools and motor drives: **
- In **power tools** (such as electric drills, screwdrivers, etc.) and **motor drive** applications, **SI7336DP-T1-GE3-VB** can provide high efficiency and high current support for motor drive systems. Due to its **maximum drain current** (80A) and **low on-resistance** (7mΩ@VGS=10V), the MOSFET can operate stably under high power loads, optimize the performance of power tools, and reduce energy waste and heat loss.
**3. Battery Management System (BMS): **
- In the **battery management system (BMS), **SI7336DP-T1-GE3-VB** MOSFET can provide stable current control, especially in **battery charge and discharge control**, playing an important role. Its **80A** maximum drain current and low on-resistance enable it to have efficient power management capabilities during the charging and discharging process of the battery pack, ensuring the safety and long life of the battery while reducing power losses.
**4. Electric Vehicles and Automotive Electronics: **
- In **electric vehicles (EV)** and **hybrid electric vehicles (HEV), **SI7336DP-T1-GE3-VB** MOSFET is widely used in battery management, motor drive and other high-power modules. Due to its low on-resistance and high current carrying capacity, it can provide efficient power conversion and current control, improve the energy efficiency of electric vehicles, optimize the performance of drive systems, and reduce energy consumption.
**5. High-efficiency power conversion and inverter: **
- **SI7336DP-T1-GE3-VB** MOSFET is widely used in **high-efficiency power conversion** modules and **inverters**, especially in **solar inverter** and **uninterruptible power supply (UPS)** systems. This MOSFET can achieve efficient power conversion within a 30V voltage range, reduce switching losses, and improve the working efficiency of the inverter, which is particularly suitable for systems that require stable power output and high efficiency.
**6. Industrial automation and control: **
- In **industrial automation** and **robot control systems**, **SI7336DP-T1-GE3-VB** MOSFET can be used for motor drive and load switching to help improve control accuracy and system efficiency. Its **80A** high current capability makes it suitable for large motors and load drives, ensuring efficient operation of industrial equipment and reducing heat loss and energy waste.
Through its **low on-resistance** (7mΩ@VGS=10V), **high current carrying capacity** (80A) and **efficient Trench technology**, **SI7336DP-T1-GE3-VB** MOSFET can be widely used in power management, battery management, power tools, motor drives, automotive electronics and other fields with high power and high efficiency requirements, providing efficient, stable and reliable current control and power conversion solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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