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SI7309DN-VB Product details

Product introduction:

Product Introduction (SI7309DN-VB)

SI7309DN-VB is a high-performance single P-channel MOSFET in DFN8 (3X3) package. It has extremely low on-resistance (RDS(ON)) and high current carrying capacity, suitable for various power management, motor control and power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is -60V, the maximum drain current (ID) is -36A, it has good temperature characteristics and low power loss, and is particularly suitable for high-frequency, high-efficiency power conversion and drive circuits. SI7309DN-VB uses Trench technology, with excellent switching performance and low on-resistance, making it perform well in high-current applications and provide higher energy efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-P -60V -1.7V 36A 21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-P -60V -1.7V 36A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-P -60V -1.7V 36A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-P
Detailed parameter description

- **Model**: SI7309DN-VB
- **Package type**: DFN8(3X3)
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Switching threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- @VGS = 4.5V: 28.8mΩ
- @VGS = 10V: 21mΩ
- **Maximum leakage current (ID)**: -36A
- **Power dissipation**: 1W (typical)
- **Operating temperature range**: -55°C to +150°C
- **Package size**: DFN8(3X3)
- **Technology**: Trench

**Features**:
- Ultra-low on-resistance (RDS(ON)) and high current capability to reduce power loss
- Excellent switching performance, suitable for high frequency applications
- High reliability, support high temperature working environment
- Support high current and low power loss applications, improve system efficiency
- Single P channel configuration, suitable for a variety of power management and driving applications

Domain and module applications:

Applications and modules

SI7309DN-VB MOSFET has high current carrying capacity and low on-resistance, suitable for a variety of high-efficiency power conversion, current control and power switching applications. The following are typical applications and modules of this MOSFET:

1. **DC-DC power converter**:
In the DC-DC converter, SI7309DN-VB MOSFET can work as an efficient switching element. Its low on-resistance helps to reduce conversion losses and improve overall conversion efficiency. It is suitable for applications such as automotive electronics, battery-powered systems and power tools.

2. **Battery Management System (BMS)**:
Power switch control in the battery management system is crucial. SI7309DN-VB MOSFET can effectively control the charging and discharging process of the battery. Its low RDS(ON) value and high current capability enable it to perform well during the charging and discharging process, ensuring the safety and efficiency of the battery.

3. **Power Tools and Power Equipment**:
SI7309DN-VB is widely used in power tools and power equipment due to its high current carrying capacity. Both electric drive systems and battery management systems require high-efficiency and low-loss MOSFETs to improve battery life and work efficiency.

4. **Motor Drive System**:
SI7309DN-VB is an ideal choice in motor control systems. It can stably control the flow of current and reduce energy loss and improve system performance through low RDS(ON) and fast switching characteristics. It is widely used in drive systems for stepper motors, DC motors and servo motors.

5. **Power Management Module**:
SI7309DN-VB can be used in efficient power management modules, especially in situations where high current carrying and fast response are required. Its low on-resistance can significantly reduce heat loss and provide high efficiency in power management systems.

6. **Inverters in Photovoltaic Systems**:
This MOSFET is suitable for use in photovoltaic inverters, which can efficiently convert direct current (DC) to alternating current (AC). Its low on-resistance and high current capability enable it to handle high power and reduce losses, suitable for solar power generation applications.

7. **Industrial Automation Systems**:
In industrial automation, the SI7309DN-VB can be used to control high current loads and achieve efficient power switch control. Its reliable performance and high current handling capability are very suitable for applications in automation equipment, motor control and drive systems.

8. **Automotive Electronics Applications**:
In modern automotive electronic systems, the SI7309DN-VB MOSFET is suitable for automotive power management and motor control applications, especially in electric vehicles (EV) and hybrid electric vehicles (HEV), which can help optimize energy conversion and improve system efficiency.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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