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SI7308DN-VB Product details

Product introduction:

SI7308DN-VB is a single N-channel MOSFET in DFN8 (3x3) package with low on-resistance and good high-efficiency performance. Its drain-source voltage (VDS) is 60V and gate-source voltage (VGS) is ±20V, which is suitable for medium and low voltage power management, load switching and other high-efficiency switching applications. The gate threshold voltage (Vth) of this MOSFET is 2.5V, which means it can be enabled at a lower drive voltage, suitable for low power control. SI7308DN-VB has a very low on-resistance of 12mΩ at VGS=10V and 15mΩ at VGS=4.5V, providing extremely low conduction losses and high current carrying capacity, ID up to 45A. This MOSFET uses Trench technology to provide efficient current conduction performance at a lower drive voltage and reduce switching losses. It is widely used in power conversion, battery management and load switching.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 60V 2.5V 45A 15mΩ 12mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 60V 2.5V 45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 60V 2.5V 45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N

SI7308DN-VB MOSFET detailed parameter description

- **Package**: DFN8 (3x3)
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench (deep trench technology), by reducing on-resistance and switching loss, optimizes current conduction efficiency.

Domain and module applications:


SI7308DN-VB MOSFET Applications and Modules

1. **Power Management and Power Conversion**:
SI7308DN-VB is widely used in power management systems, especially in medium and low voltage power converters, DC-DC converters and power modules due to its low on-resistance and high current carrying capacity. It can effectively reduce losses in power conversion, provide efficient voltage conversion and power management, and is suitable for power design in communication equipment, automotive electronics and consumer electronics.

2. **Battery Management System (BMS)**:
SI7308DN-VB has low on-resistance and high current capability, making it very suitable as a switching element in battery management systems, especially in battery management of electric vehicles (EV), energy storage systems and battery charge and discharge management in portable devices. Low conduction loss helps to extend battery life and improve charging efficiency.

3. **Load Switch and High-Efficiency Switching Power Supply**:
Due to its low RDS(ON) and high current carrying capacity, SI7308DN-VB can be used in high-efficiency load switching applications, especially for scenarios where high current loads need to be controlled. In applications such as smart homes, industrial automation, and communication equipment, it can effectively control current and improve the overall efficiency and reliability of the system.

4. **Power Tools and Motor Drive**:
The low RDS(ON) and high current capability of this MOSFET make it very suitable for power tools and motor drive systems. Especially in brushless DC motors (BLDC) and stepper motor drives, SI7308DN-VB provides efficient power transmission, reduces power losses, and improves drive efficiency.

5. **Automotive Electronics and In-Vehicle Power**:
In automotive electronics applications, SI7308DN-VB can be used in in-vehicle power management systems as a switching element in voltage conversion modules, especially in battery power systems and chargers. Its efficient current management and low on-resistance make it ideal for use in automotive battery management systems and efficient charging control for electric vehicles.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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