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Si7252ADP-VB Product details

Product introduction:

**Si7252ADP-VB MOSFET Product Introduction**

**Model**: Si7252ADP-VB
**Package Type**: DFN8(5X6)-B
**Configuration**: Dual-N+N-Channel
**Maximum Drain-Source Voltage (VDS)**: 100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V
**On-Resistance (RDS(ON))**:
- **22mΩ** @VGS=4.5V
- **18mΩ** @VGS=10V
**Maximum Drain Current (ID)**: 30A
**Technology**: Trench

The Si7252ADP-VB is a high-efficiency, low on-resistance dual N-channel MOSFET suitable for power management systems and high-efficiency drive circuits that require high current and low power loss. The maximum drain-source voltage of this MOSFET is 100V and it can withstand a maximum drain current of 30A. Its low on-resistance (RDS(ON)) enables it to have excellent performance in switching applications, effectively reducing heat generation and improving system efficiency. The Si7252ADP-VB is suitable for power management, load switching, and high-efficiency current control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6)-B Dual-N+N 100V 1.8V 30A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6)-B Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6)-B Dual-N+N 100V 1.8V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6)-B Dual-N+N 100V 1.8V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6)-B Dual-N+N
**Si7252ADP-VB MOSFET Detailed Parameter Description**

- **Package Type**: DFN8(5X6)-B
- The DFN8(5X6)-B package is used to provide reliable heat dissipation for high-current MOSFETs and ensure good thermal management and signal transmission.

- **Configuration**: Dual-N+N-Channel
- This product contains two sets of N-channel MOSFETs, which are suitable for circuit designs requiring bipolar switching functions. It can provide high current carrying capacity in a single package and is suitable for a variety of loads and control tasks.

- **VDS (drain-source voltage)**: 100V
- The maximum drain-source voltage is 100V, which is suitable for medium and high voltage applications and can work reliably over a wide voltage range.

- **VGS (gate-source voltage)**: ±20V
- The maximum gate-source voltage is ±20V, ensuring compatibility with different control voltage sources and is widely applicable to various drive circuits.

- **Vth (threshold voltage)**: 1.8V
- The threshold voltage is 1.8V, which means that the MOSFET can be enabled at a lower gate voltage, suitable for low-voltage control systems.

- **RDS(ON) (on-resistance)**:
- **22mΩ** @VGS=4.5V
- **18mΩ** @VGS=10V
- The on-resistance is very low, and the conduction loss is small even when a large current passes through, which helps to improve the efficiency of the system and reduce heat.

- **ID (drain current)**: 30A
- The maximum drain current is 30A, which can withstand high load current and is suitable for high power applications.

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Domain and module applications:

**Application fields and modules of Si7252ADP-VB MOSFET**

1. **DC-DC converters and power management systems**
The low on-resistance and high current carrying capacity of Si7252ADP-VB make it very suitable for use in DC-DC converters and power management modules. It can effectively reduce switching losses and improve conversion efficiency, especially in power systems with high power density and large current loads. By efficiently managing power conversion, battery life and energy consumption can be optimized.

2. **Electric vehicles (EV) and charging systems**
In electric vehicles (EVs), the high current carrying capacity and low power loss of Si7252ADP-VB make it an ideal choice, especially in battery management systems (BMS), chargers, and battery charging and discharging control circuits. It helps optimize the battery charging process, improve system efficiency, extend battery life, and provide stable power control.

3. **Industrial Automation and Motor Drive Systems**
In industrial automation applications, especially motor drive systems, the Si7252ADP-VB can withstand high currents and is suitable for motor control and drive circuits. Its low on-resistance can effectively reduce power loss and improve system efficiency. For high-power motor drives, elevator systems or robot control applications, the Si7252ADP-VB provides reliable performance support.

4. **Power Converters and Inverters**
In power conversion devices such as solar inverters and wind inverters, the Si7252ADP-VB can optimize the power conversion process. Due to its low RDS(ON) value, it can reduce heat and losses during power conversion, ensuring that the equipment maintains a low temperature under long-term efficient operation, making it an ideal choice for inverters and power electronic modules.

5. **Power Switch and Load Control Circuits**
Due to its dual N-channel design, the Si7252ADP-VB performs well in load switching and efficient power control circuits. In current load switching, power switching and protection circuits, the Si7252ADP-VB provides fast response and low loss, and is suitable for home appliances, high-power industrial equipment and other occasions.

6. **Efficient Battery Management and UPS Systems**
In uninterruptible power supply (UPS) systems and battery management systems, the Si7252ADP-VB can achieve efficient battery charging and discharging management and ensure the safe operation of the battery pack. Its low RDS(ON) value helps reduce power loss in battery systems and extend the operating time of equipment, especially in high-load scenarios.

7. **Consumer Electronics and Smart Power Modules**
In power modules of consumer electronics such as laptops, smartphones, and tablets, the Si7252ADP-VB can provide efficient power conversion and low power management. By optimizing the current path and reducing power consumption, it helps to extend the battery life of the device and improve the overall performance of the product.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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