Product introduction：
Product Introduction:
**SI7232DN-T1-GE3-VB** is a high-efficiency dual N-channel power MOSFET that uses advanced **Trench technology** and has a **DFN8(3X3)** package, which is suitable for power applications that require high efficiency and small size. This MOSFET has a very low on-resistance (R_DS(on)), providing low power consumption and high efficiency performance, and is particularly suitable for use in power systems with large currents. Its maximum drain-source voltage (V_DS) is **20V** and its maximum drain current (I_D) is **9.4A**, which performs well in multiple low-voltage and medium-power application scenarios.
Due to its low switching loss and high switching speed, **SI7232DN-T1-GE3-VB** is particularly suitable for applications that require efficient switching, such as **power converters, load switches, and battery management systems**. Its good electrical performance, compact packaging and durability make it widely applicable in many fields such as consumer electronics, industrial control, and automotive electronics.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Dual-N |
20V |
|
0.5~1.5V |
9.4A |
|
|
10mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Dual-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Dual-N |
20V |
|
0.5~1.5V |
9.4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Dual-N |
20V |
|
0.5~1.5V |
9.4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Dual-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package type**: DFN8(3X3)
- **Configuration**: Dual N-channel
- **Maximum drain-source voltage (V_DS)**: 20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 0.5V to 1.5V
- **On-resistance (R_DS(on))**:
- 12mΩ @ V_GS = 4.5V
- 10mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 9.4A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power loss**: Suitable for low-power to medium-power high-efficiency applications
- **Typical Applications**: Power management, switching power supplies, load switches, battery chargers, power tools, etc.
Domain and module applications：
Product application areas and modules:
**1. Power converter and DC-DC converter: **
**SI7232DN-T1-GE3-VB** Due to its low R_DS(on) and high current handling capability, it is widely used in **DC-DC converters**, **power management systems**, **load switches** and other application scenarios that require efficient power transmission. In these occasions, it can effectively reduce power loss and temperature rise, improve system efficiency, especially in power systems that require high-frequency switching and high current, providing higher efficiency and reliability.
**2. Battery Management System (BMS) and Charger: **
The high efficiency of this MOSFET makes it very suitable for use in battery management systems (BMS) and chargers, especially in battery management of power tools, electric bicycles and electric vehicles, playing a key role. Low on-resistance can effectively reduce heat loss during battery charging and ensure charging efficiency.
**3. Consumer electronics and smart devices: **
In consumer electronics and smart devices, such as smartphones, portable audio, LED drivers, etc., **SI7232DN-T1-GE3-VB** MOSFET is widely used in low-power power management and battery switching systems due to its compact package and excellent electrical characteristics. It greatly improves the energy utilization of the system while ensuring long-term stable operation of the equipment.
**4. Industrial automation and power tools: **
This MOSFET is also suitable for **industrial automation equipment** and **power tools**, especially in electric drive systems and control systems that require high switching frequencies and large currents. **SI7232DN-T1-GE3-VB** can provide stable current control under high-power load conditions, optimize the performance of the motor drive system, and ensure system response speed and stability.
**5. Automotive electronics and electric vehicles: **
In the field of electric vehicles (EVs) and automotive electronics, this MOSFET can handle the needs of high current and high-frequency switching. It can be used in battery management, inverters, and on-board power systems of electric vehicles to help improve the system's power density and operating efficiency while reducing power loss and heat accumulation.
By using **SI7232DN-T1-GE3-VB**, designers can achieve efficient power management and low power consumption in a variety of applications, while ensuring system performance, reducing energy loss and heat generation, and improving overall system reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page.png)
