Product introduction：
**Si5504BDC-T1-GE3-VB MOSFET Product Introduction**
**Model**: Si5504BDC-T1-GE3-VB
**Package type**: DFN8(3X2)-B
**Configuration**: Dual-N+P-Channel
**Technology**: Trench
**Operating voltage (VDS)**: ±20V
**Maximum gate-source voltage (VGS)**: ±8V
**Threshold voltage (Vth)**: 0.8V (N-Channel), -0.8V (P-Channel)
**On-resistance (RDS(ON))**:
- **N-Channel**: 36mΩ @VGS=4.5V, 32mΩ @VGS=10V
- **P-Channel**: 97mΩ @VGS=4.5V, 69mΩ @VGS=10V
**Maximum drain current (ID)**:
- **N-Channel**: 5.9A
- **P-Channel**: -4.1A
**Application areas**:
The Si5504BDC-T1-GE3-VB is a high-performance dual-channel MOSFET that is widely used in power management, load switching, load driving and power conversion applications. Due to its low on-resistance and wide voltage operating range, this MOSFET is very suitable for power management modules in low-voltage systems, battery-driven devices and communication systems. It is particularly suitable for switching power supplies, synchronous rectification, and control of bipolar power supplies.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X2)-B |
Dual-N+P |
±20V |
|
0.8/-0.8V |
5.9/-4.1A |
|
|
32/69mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X2)-B |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X2)-B |
Dual-N+P |
±20V |
|
0.8/-0.8V |
5.9/-4.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X2)-B |
Dual-N+P |
±20V |
|
0.8/-0.8V |
5.9/-4.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X2)-B |
Dual-N+P |
|
|
|
|
|
|
|
**Si5504BDC-T1-GE3-VB MOSFET Detailed Parameter Description**
- **Package Type**: DFN8(3X2)-B
- The miniaturized DFN8 package helps save PCB space and optimize thermal performance, suitable for space-constrained applications.
- **Configuration**: Dual-N+P-Channel
- This configuration provides bipolar switching capability in the design, which can achieve more efficient power conversion, synchronous rectification and load switching.
- **VDS (drain-source voltage)**: ±20V
- Supports bipolar voltage (±20V), suitable for symmetrical power supply or load switching applications. Able to work reliably in positive and negative voltage environments.
- **VGS (gate-source voltage)**: ±8V
- Provides a wider gate drive voltage range, which helps the stable switching performance of the MOSFET.
- **Vth（Threshold Voltage）**：
- **N-Channel**：0.8V
- **P-Channel**：-0.8V
- Low threshold voltage makes the switching process more efficient, especially suitable for low power design.
- **RDS(ON)**（On-Resistance）：
- **N-Channel**:
- 36mΩ @VGS=4.5V
- 32mΩ @VGS=10V
- **P-Channel**:
- 97mΩ @VGS=4.5V
- 69mΩ @VGS=10V
- Low on-resistance provides higher efficiency and reduces power loss, suitable for high-efficiency power conversion systems.
- **ID (drain current)**:
- **N-Channel**: 5.9A
- **P-Channel**: -4.1A
- Has good carrying capacity in positive and negative current environments, suitable for load switching and driving applications.
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Domain and module applications：
**Application fields and modules of Si5504BDC-T1-GE3-VB MOSFET**
1. **Power management system**:
Si5504BDC-T1-GE3-VB is suitable for efficient power management circuits, especially in battery-powered devices. It can achieve efficient power conversion and load switching in low voltage environments, ensuring that the equipment can work stably under various load conditions.
2. **Synchronous rectification**:
The low on-resistance and good current carrying capacity of this MOSFET make it very suitable for use in synchronous rectification circuits, especially in DC-DC converters, where it can greatly reduce power loss, improve the efficiency of the entire power conversion, and extend battery life.
3. **Low voltage power converter**:
In miniaturized power modules, Si5504BDC-T1-GE3-VB is suitable for low voltage DC-DC converters, helping to convert input voltage into a stable output voltage, especially in high-efficiency applications, which can effectively improve energy utilization. It can also be used as a load switch in a switching power supply to ensure fast and stable current switching.
4. **Communication system**:
This MOSFET is also very suitable for use in communication equipment, especially in low-voltage driven RF power amplifiers (PA) and power management modules. Low on-resistance and high current carrying capacity make it play a key role in such equipment.
5. **Load drive circuit**:
In the load drive circuit, Si5504BDC-T1-GE3-VB can be used as a load switch to efficiently control the current flow of the load. Its low on-resistance ensures that no excessive heat is generated when driving large loads, especially for high-frequency and high-power applications.
6. **Bipolar power system**:
Si5504BDC-T1-GE3-VB is suitable for switch control in bipolar power supply systems. It can work reliably in positive and negative voltage environments and is very suitable for automotive electronics and other occasions requiring bipolar power supply.
7. **Battery Management System**:
In a battery management system, this MOSFET can be used as a power switch in the battery protection circuit to ensure that the battery is charged and discharged within a safe range. Its low on-resistance helps reduce power loss and improve battery charging efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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