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SI4927DY-T1-E3-VB Product details

Product introduction:

**SI4927DY-T1-E3-VB MOSFET Product Introduction**

**Model**: SI4927DY-T1-E3-VB
**Package Type**: SOP8
**Configuration**: Dual-P+P-Channel
**Technology**: Trench
**Operating Voltage**: -30V
**Maximum Gate-Source Voltage (VGS)**: ±12V
**Threshold Voltage (Vth)**: -1.7V
**On-Resistance (RDS(ON))**:
- 28mΩ @VGS=4.5V
- 21mΩ @VGS=10V
**Maximum Drain Current (ID)**: -8A

**Application Areas**:
The SI4927DY-T1-E3-VB MOSFET is suitable for low voltage, bipolar power management, load switch control and reverse current protection. With its low on-resistance and high current carrying capacity, it is particularly suitable for use in battery management, motor control and load drive circuits. Due to its dual P-type channel configuration, this MOSFET is particularly suitable for circuits requiring symmetrical loads or bipolar power conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-P+P -30V -1.7V -8A 21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-P+P -30V -1.7V -8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-P+P -30V -1.7V -8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-P+P
**SI4927DY-T1-E3-VB MOSFET Detailed Parameter Description**

- **Package Type**: SOP8 (surface mount package, suitable for efficient heat dissipation and miniaturized design)
- **Configuration**: Dual P-type + P-type channel configuration, suitable for bipolar power supply, reverse current protection circuit and load switching.
- **VDS (drain-source voltage)**: -30V, suitable for low-voltage applications, especially in systems that require negative voltage operation.
- **VGS (gate-source voltage)**: ±12V, supports higher gate drive voltage.
- **Vth (threshold voltage)**: -1.7V, the low threshold voltage makes it suitable for low-voltage control systems, ensuring fast switching response.
- **RDS(ON)**:
- **28mΩ @VGS=4.5V**: Suitable for medium gate drive, the lower on-resistance helps reduce power loss.
- **21mΩ @VGS=10V**: At higher gate voltages, on-resistance is further reduced, improving current transfer efficiency, suitable for efficient power conversion applications.
- **ID (drain current)**: -8A, capable of supporting higher current loads, suitable for high-efficiency switching circuits, and ensuring stability when driving loads.

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Domain and module applications:

**SI4927DY-T1-E3-VB MOSFET Application Fields and Modules**

1. **Power Management Module**:
- **Bipolar Power Conversion**: SI4927DY-T1-E3-VB is suitable for bipolar power conversion applications, such as push-pull converters and half-bridge power designs. Due to its dual P-type configuration, it can efficiently switch negative voltages and is suitable for providing stable power to low-voltage loads.
- **Load Switching and Power Management**: In power switching applications, this MOSFET can respond quickly and provide efficient power management, especially for devices that require negative current management, such as load switching, battery power management, etc.

2. **Reverse Current Protection**:
- SI4927DY-T1-E3-VB performs well in circuits that require reverse current protection, especially in battery charging systems and power tools, preventing reverse charging of batteries or system damage by controlling the direction of current. Low Vth and low RDS(ON) enable lower power consumption and higher efficiency in this application.
- For example, in the battery management system of portable devices, it can effectively prevent the reverse flow of current and protect the battery and circuit from damage.

3. **Battery Management System (BMS)**:
- In the battery management system, SI4927DY-T1-E3-VB can be used for battery protection and current monitoring. Due to its dual P-type configuration, this MOSFET can provide effective control for the battery charging and discharging process, especially for battery protection circuits with negative voltage requirements.
- It can provide efficient and reliable solutions in battery balancing, overcharge/overdischarge protection, battery temperature control, etc.

4. **LED driving and lighting control**:
- In LED driving circuits, especially high-power LED driving circuits, SI4927DY-T1-E3-VB can provide efficient current control with low RDS(ON). Its low on-resistance ensures low power loss under high current load.
- It is suitable for various LED lighting systems, car light drive systems, etc., reducing energy consumption while improving system stability.

5. **Motor Control and Drive**:
- In motor control systems, SI4927DY-T1-E3-VB can be used as a switching element for motor drive, especially for motor control circuits that require reverse current protection and bipolar power supply, such as stepper motor drive, power tools, and electric vehicle drive systems.
- Its low on-resistance and high current carrying capacity help improve the efficiency of motor drive circuits and reduce heat and energy loss.

6. **Automotive Electronics Applications**:
- In the field of automotive electronics, SI4927DY-T1-E3-VB is suitable for on-board power management, LED lights, electric window control, seat adjustment systems, etc. The low on-resistance and high current carrying capacity of this MOSFET enable it to have good performance in automotive electrical systems, especially in negative voltage management and bipolar power conversion.
- For example, in an on-board battery management system, SI4927DY-T1-E3-VB can effectively control the battery charging and discharging process, improve battery efficiency and extend battery life.

Through its low Vth, low RDS(ON) and moderate ID, SI4927DY-T1-E3-VB provides efficient and reliable power management, load switching and reverse current protection solutions in multiple application scenarios, especially for low-voltage, bipolar power conversion and high-efficiency drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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