Product introduction：
SI4925BDY-T1-E3-VB MOSFET Product Introduction
SI4925BDY-T1-E3-VB is a bipolar P+P type trench MOSFET in SOP8 package, designed for low voltage and high efficiency power conversion and load management applications. This model has a maximum drain-source voltage (VDS) of -30V and a gate-source voltage (VGS) range of ±12V, suitable for environments requiring high switching efficiency and low power loss. Its on-resistance (RDS(ON)) is 28mΩ (VGS=4.5V) and 21mΩ (VGS=10V), which can provide excellent performance at higher currents. The maximum drain current (ID) is -8A, and the use of Trench technology can ensure the lowest power loss while providing high current and stable working environment.
This MOSFET is particularly suitable for scenarios requiring bipolar P+P type switches, and plays a key role in power management systems, especially in load switching, battery management, and high efficiency power conversion applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-1.7V |
-8A |
|
|
21mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-1.7V |
-8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-1.7V |
-8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-P+P |
|
|
|
|
|
|
|
SI4925BDY-T1-E3-VB MOSFET Detailed parameter description
- **Model**: SI4925BDY-T1-E3-VB
- **Package**: SOP8
- **Configuration**: Bipolar P+P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 28mΩ @ VGS = 4.5V
- 21mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Pd)**: 75W (typical)
Domain and module applications：
SI4925BDY-T1-E3-VB MOSFET Applications and Module Examples
1. **Power Management and DC-DC Converters**
- SI4925BDY-T1-E3-VB is ideally suited as a switching element for DC-DC converters in power management systems. Due to its low on-resistance, it can effectively reduce power loss during the conversion process and improve efficiency. This makes it very suitable for power conversion modules in power adapters, battery chargers and other portable devices, especially in situations where high performance and low power consumption are required.
2. **Load Switch and Battery Protection**
- As a bipolar P+P type MOSFET, SI4925BDY-T1-E3-VB is suitable for load switches and battery management systems (BMS) to control current flow and protect batteries from overcurrent damage. The low RDS(ON) characteristics enable it to effectively reduce power losses in load switches and provide efficient power control, especially for systems that require efficient load management, such as power tools, electric toys, and mobile power supplies.
3. **Battery Management System (BMS)**
- In battery management systems, SI4925BDY-T1-E3-VB can be used as a switching element for current control during battery charging and discharging. Especially in electric vehicles, portable devices and solar cell systems, MOSFET can ensure safe operation of batteries under efficient current control. Its low on-resistance can effectively reduce heat loss and extend the service life of the system.
4. **Wireless Charging System**
- In wireless charging systems, SI4925BDY-T1-E3-VB can be used for switch control in power management modules to ensure stable current flow during charging. Through efficient power conversion, this MOSFET can ensure that wireless chargers maintain efficient and stable working performance under different load conditions.
5. **Consumer Electronics and Home Appliances**
- In consumer electronic devices and home appliances, SI4925BDY-T1-E3-VB is suitable for power adapters, battery management modules and various switching power supply designs. Especially in TVs, audio systems, computers and small appliances that require lower power consumption and higher efficiency, this MOSFET can provide stable current control and low power loss.
6. **Inverter and Electric Drive System**
- In inverter and electric drive systems, SI4925BDY-T1-E3-VB can be used as a switching element for efficient current control, especially in DC-AC converters. It can effectively reduce power loss and improve the efficiency of the drive system, and is suitable for applications such as solar inverters and motor drives.
Through its low RDS(ON) characteristics, high current carrying capacity and bipolar P+P channel design, SI4925BDY-T1-E3-VB MOSFET can provide efficient and stable performance in multiple application fields, especially for key applications such as power management, battery protection and efficient current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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