Product introduction：
1. Product Introduction:
**SI4923DY-T1-E3-VB** is a dual P+PN channel MOSFET in SOP8 package, designed for low-voltage power management and switching circuits. This MOSFET has excellent on-resistance (RDS(ON)) and supports a maximum drain-source voltage (VDS) of -30V, suitable for negative power supply and bipolar current switching applications. SI4923DY-T1-E3-VB adopts Trench process, has excellent electrical performance and efficient current switching characteristics, and is particularly suitable for power management, reverse current protection, load switching and battery protection systems. Its low on-resistance and high current carrying capacity (maximum ID is -8A) make it very suitable for high-efficiency power supply design.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-1.7V |
-8A |
|
|
21mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-1.7V |
-8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-P+P |
-30V |
|
-1.7V |
-8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-P+P |
|
|
|
|
|
|
|
2. Detailed parameter description:
- **Model**: SI4923DY-T1-E3-VB
- **Package type**: SOP8
- **Configuration**: Dual P+PN channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- RDS(ON) = 28mΩ (at VGS = 4.5V)
- RDS(ON) = 21mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: -8A
- **Technology**: Trench process
Domain and module applications：
3. Application fields and modules:
# 1. **Power management and DC-DC converter**:
SI4923DY-T1-E3-VB exhibits excellent performance in power management systems, especially in low-voltage, high-efficiency DC-DC converters. Its low on-resistance characteristics make it an ideal choice for efficient power conversion. In DC-DC converters, especially when used in synchronous rectification applications, it can significantly improve conversion efficiency and reduce power losses. In low-voltage (such as 5V or 12V) power supply systems, MOSFETs can achieve efficient current switching and improve the overall performance of the power supply.
Summary:
SI4923DY-T1-E3-VB is a high-efficiency, low-power loss dual P+PN channel MOSFET that is widely used in power management, DC-DC converters, reverse current protection, battery protection, and motor drives. Its low on-resistance and high current carrying capability enable it to excel in applications requiring high-efficiency current switching, especially in low-voltage systems and high-efficiency power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
