Product introduction:
Product Introduction
**SI4914BDY-T1-E3-VB** is an N+N channel MOSFET with a **half-bridge structure**, packaged in SOP8, suitable for various medium and low voltage power conversion and switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for efficient switching in low voltage environments. Manufactured using the Trench process, it has a low on-resistance (RDS(ON)), which is 12mΩ (at a gate voltage of 4.5V) and 8mΩ (at a gate voltage of 10V), respectively, enabling low loss and efficient operation at high frequencies and high currents. This model has a maximum drain current (ID) of 8A, suitable for applications requiring higher currents and low voltages.
File download
Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI4914BDY-T1-E3-VB
- **Package type**: SOP8
- **Configuration**: Half-bridge structure (N+N channel)
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.7V
- **RDS(ON) on-resistance**:
- Under 4.5V gate voltage: 12mΩ
- Under 10V gate voltage: 8mΩ
- **ID (maximum drain current)**: 8A
- **Technology**: Trench (channel process)
Domain and module applications:
Applications and module examples
1. **DC-DC converter**: SI4914BDY-T1-E3-VB performs well as a half-bridge N+N channel MOSFET in high-efficiency DC-DC converters, and is particularly suitable for high-efficiency, low-voltage conversion applications. Its low RDS(ON) helps reduce energy loss and greatly improves conversion efficiency, making it suitable for consumer electronics, portable devices and other occasions that require high-efficiency power conversion.
2. **Battery Management System (BMS)**: In battery charge management and battery protection circuits, SI4914BDY-T1-E3-VB can be used for battery charging and discharging control. The low on-resistance of the MOSFET reduces the energy loss during charging and discharging, thereby extending the battery life and ensuring the stable operation of the battery management system.
3. **Power tools and home appliance power supplies**: This model of MOSFET can be used for voltage conversion and protection functions in power tools and home appliance power modules. Due to its high current carrying capacity and efficient switching performance, it can effectively cope with the power requirements of power tools and household appliances.
4. **LED Driver**: SI4914BDY-T1-E3-VB is suitable for power switch modules in LED driver power supplies, providing stable and efficient current control. Its low on-resistance results in less power loss and heat accumulation, which is particularly suitable for LED lighting systems that require efficient power management.
5. **Automotive Electronic Power**: In automotive electronic systems, SI4914BDY-T1-E3-VB can be used in applications such as battery management systems, electric power steering (EPS), and on-board power systems. Its efficient switching performance and stable current control capabilities make it very suitable for efficient operation in automotive environments.
6. **Power Converters and Switching Power Supplies**: This MOSFET is also widely used in high-frequency switching power supplies (such as adapters, inverters, etc.). Its high-frequency response characteristics and low on-resistance enable it to handle high currents during high-speed switching and maintain efficient conversion performance.
The half-bridge structure of SI4914BDY-T1-E3-VB makes it particularly suitable for applications that require efficient power conversion, while also effectively supporting higher current and low voltage systems. Whether in consumer electronics, automotive electronics, industrial equipment, or battery management systems, it can demonstrate its excellent performance and efficient power control capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours