Product introduction：
SI4914ADY-T1-E3-VB MOSFET Product Introduction
SI4914ADY-T1-E3-VB is an integrated half-bridge N+N channel MOSFET in SOP8 package, designed for high-efficiency switching power supply and current control applications. This model has a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) range of ±20V, suitable for scenarios requiring high switching speed and low power loss. Its on-resistance (RDS(ON)) is 12mΩ (VGS=4.5V) and 8mΩ (VGS=10V), respectively, which can provide excellent efficiency at high current. With a maximum drain current (ID) of 8A, it uses Trench technology with low on-resistance and high switching performance, making it ideal for power conversion, load switching and drive applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
|
|
SI4914ADY-T1-E3-VB MOSFET Detailed parameter description
- **Model**: SI4914ADY-T1-E3-VB
- **Package**: SOP8
- **Configuration**: Half-bridge N+N channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (Pd)**: 75W (typical)
Domain and module applications：
SI4914ADY-T1-E3-VB MOSFET Applications and Module Examples
1. **Power Management and DC-DC Converters**
- SI4914ADY-T1-E3-VB is an ideal half-bridge switch element in power management systems. It can efficiently convert voltage in DC-DC converters and maintain low power loss under high current conditions. Its low on-resistance results in less heat loss during the conversion process, which is very suitable for portable electronic devices and high-efficiency power systems.
2. **Electric Drive and Motor Control**
- In electric drive systems, especially DC motor control and motor drives, SI4914ADY-T1-E3-VB can be used as a half-bridge drive switch to provide fast switching and efficient current control. It is suitable for applications such as fan drives, power tools, electric toys and electric vehicles, and its low on-resistance ensures high efficiency of the system under high load.
3. **Load Switching and Protection Circuits**
- Due to its low on-resistance and high current carrying capacity, SI4914ADY-T1-E3-VB is suitable for various load switching applications, providing stable switching performance under high load current conditions. Especially in battery management systems (BMS) and current protection circuits, MOSFET can effectively control current flow and prevent overload conditions.
4. **Home Appliances and Consumer Electronics**
- In home appliances and consumer electronics, SI4914ADY-T1-E3-VB is suitable for switching circuits of power modules, especially in power management of high-efficiency power adapters, TVs, audio and computer equipment. Due to its low on-resistance and high current carrying capacity, it can significantly improve power efficiency and reduce power losses.
5. **Wireless Charging and Battery Management System (BMS)**
- In wireless charging systems and battery management, SI4914ADY-T1-E3-VB can be used as a half-bridge switch element to control the flow of charging current. It can maintain low temperature rise during high-efficiency battery charging and discharging, providing efficient current control, and is particularly suitable for electric vehicle charging stations, mobile devices, and other fields that require high-efficiency battery management.
Through its low RDS(ON) characteristics and efficient switching performance, SI4914ADY-T1-E3-VB MOSFET excels in multiple fields such as power management, electric drive, and battery management, and is an ideal choice for modern high-efficiency current control and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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