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SI4913DY-VB Product details

Product introduction:

SI4913DY-VB MOSFET Product Introduction

SI4913DY-VB is a dual-channel P+P type MOSFET in SOP8 package, designed for low voltage, high-efficiency switching applications. It operates in a dual P-channel configuration, has a lower on-resistance (RDS(ON)) and a higher current carrying capacity, and is suitable for various power conversion and power management systems. This MOSFET uses Trench technology, with a maximum drain-source voltage (VDS) of -20V and a maximum drain current (ID) of -8.9A, which is suitable for load switching and power management in medium and low voltage systems. This MOSFET is particularly suitable for bipolar switching operations that require lower on-resistance and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-P+P -20V -1.2V -8.9A 16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-P+P -20V -1.2V -8.9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-P+P -20V -1.2V -8.9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-P+P
SI4913DY-VB MOSFET detailed parameter description

- **Package**: SOP8
- **Configuration**: Dual P+P type channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.2V
- **On-resistance (RDS(ON))**:
- 18mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -8.9A
- **Technology**: Trench technology

Domain and module applications:

Application fields and module examples

1. **Power management system**
SI4913DY-VB's dual P-type channel configuration and low on-resistance make it particularly suitable as an efficient switching element in power management and conversion applications. It can be used in DC-DC converters, AC-DC power adapters, and battery management systems (BMS) to improve energy efficiency and reduce system heating. In these applications, it can provide stable current control, reduce power loss, and thus improve the efficiency of the overall system.

2. **Inverter and battery drive system**
In inverter and battery drive systems, SI4913DY-VB can be used to efficiently control the flow of current. Its P-type MOSFET characteristics provide important advantages in reverse current applications, especially suitable for battery charge/discharge control. Due to its low RDS(ON), the MOSFET can maintain high efficiency at lower voltage and higher current conditions, reduce energy loss, and ensure efficient and stable operation of the system.

3. **Load Switch and Intelligent Power Management**
SI4913DY-VB is suitable for various systems that require efficient load switch control, especially intelligent power management modules. In this application, MOSFET, as a load switch element, can provide fast response when the load is turned on or off, reducing the power loss of the system. It is commonly found in consumer electronics, power tools, and portable devices to ensure stable switching of power in different states.

4. **Automotive Electronics**
In automotive electronic systems, such as battery management systems (BMS), electric power steering (EPS), and power conversion modules for electric vehicles (EV) and hybrid electric vehicles (HEV), SI4913DY-VB can efficiently control current and handle reverse current issues. Its 20V drain-source voltage enables it to perform well in handling low-voltage loads and power conversion in automotive electrical systems, ensuring stable system operation.

5. **Load protection and overload protection circuits**
Due to its low RDS(ON) and high current carrying capacity, SI4913DY-VB can be used in load protection circuits for fast disconnection when the load is short-circuited or overloaded. The dual P-type channel design of this MOSFET enables it to provide reliable switching performance in current control in different directions, and is particularly suitable for current protection and overload protection systems.

6. **Wearable devices and IoT**
In wearable and IoT devices, the low on-resistance and high-efficiency switching performance of SI4913DY-VB make it very suitable for low-power systems. It can provide long battery life and reduce energy consumption, and is particularly suitable for low-power applications such as smart watches, health tracking devices, and wireless sensors.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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