Featured Model

Your present location > Home page > Featured Model

SI4884DY-T1-E3-VB Product details

Product introduction:

Product Introduction (SI4884DY-T1-E3)

SI4884DY-T1-E3 is a single N-channel MOSFET produced by Vishay, using SOP8 package, designed for high-efficiency power switching and low-voltage control applications. It has a low on-resistance (RDS(ON)), which effectively reduces power loss. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the gate-source voltage (VGS) is ±20V, the switching threshold voltage (Vth) is 1.7V, and the maximum leakage current (ID) is 13A. SI4884DY-T1-E3 adopts Trench technology, has good switching performance and low loss, and can play a role in multiple high-efficiency applications. Its excellent characteristics make it suitable for power management, power conversion, LED drive, DC-DC converter and motor drive.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Model**: SI4884DY-T1-E3
- **Package**: SOP8
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Switching threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ @VGS = 4.5V
- 8mΩ @VGS = 10V
- **Maximum leakage current (ID)**: 13A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C

Domain and module applications:

Applications and modules

SI4884DY-T1-E3 has low RDS(ON) and high efficiency, making it an ideal choice for a variety of power switching and power management applications. The following are its typical application areas:

1. **Power management and DC-DC converter**
Due to its low on-resistance, SI4884DY-T1-E3 is suitable for power management systems, especially modules such as DC-DC converters and voltage regulators. Its low power consumption characteristics minimize energy loss and help improve the overall efficiency of the system. It is widely used in consumer electronics, industrial equipment and battery-powered systems.

2. **LED drive circuit**
In LED drive applications, MOSFETs need to have high switching speeds and low power losses to ensure stable operation of LEDs over a long period of time. The low on-resistance and efficient switching characteristics of SI4884DY-T1-E3 make it very suitable for LED drive circuits, which are commonly found in applications such as LED lighting, LED backlighting, and display screens.

3. **Motor drive and control**
In motor control systems such as power tools, electric fans, and electric vehicles, SI4884DY-T1-E3 can effectively control motor start, stop, and speed regulation as a switching element. It supports larger currents (13A), can efficiently drive and control motors, and is widely used in consumer electronics and automation equipment.

4. **Battery management and charging system**
For battery-driven devices such as portable devices, smartphones, tablets, and power tools, SI4884DY-T1-E3 can effectively manage the battery charging process. Its high efficiency can reduce battery loss and improve the overall performance of the charging system, ensuring long-term operation of the device and the health of the battery.

5. **Power conversion in consumer electronics**
In consumer electronic devices such as laptops, tablets, and smartphones, SI4884DY-T1-E3 is widely used in power conversion, voltage regulation, and battery management modules. Low RDS(ON) values help reduce heat and improve system efficiency, thereby extending the life of the equipment.

6. **Power Amplifier and RF Applications**
In RF and communication equipment, SI4884DY-T1-E3 can provide fast switching response and efficient power conversion, suitable for applications such as power amplifiers, telecommunications base stations, and RF modems.

In summary, SI4884DY-T1-E3 is a MOSFET that is very suitable for low-voltage, high-efficiency power switching and power management applications. It can provide stable, reliable and efficient power conversion solutions in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat