Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Model**: SI4882DY-T1-E3-VB
- **Package**: SOP8
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 11mΩ @ V_GS = 4.5V
- 8mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 13A
- **Technology**: Trench technology
- **Maximum power loss**: Depending on the heat dissipation conditions, the power loss is related to R_DS(ON) and the operating current.
Domain and module applications：
Application fields and modules:
1. **DC-DC power converter**:
- SI4882DY-T1-E3-VB's low on-resistance and high current carrying capacity give it excellent performance in DC-DC power converters. It performs well in conversion efficiency and can provide stable output at low input voltage. It is suitable for a wide voltage range of 5V to 30V and is particularly suitable for use in mobile phone chargers, computer power supplies and other devices.
2. **Battery-powered system**:
- This MOSFET can effectively manage the flow of current in battery-powered systems, especially for battery-driven devices such as handheld devices, power tools and smart hardware. Due to its low R_DS(ON) characteristics, it can reduce the loss of battery energy and thus extend the battery life.
3. **High-efficiency switching power supply (SMPS)**:
- In high-frequency switching power supplies, SI4882DY-T1-E3-VB's low on-resistance and fast switching characteristics make it an ideal choice. It can reduce switching losses and improve system efficiency, and is widely used in computer power supplies, TV power supplies, LED driver power supplies and other fields.
4. **Motor drive circuit**:
- In the motor drive module, this MOSFET has high current handling capability and fast response characteristics, which is very suitable for use in brushless DC motor (BLDC) control systems, and can provide efficient and stable motor drive to ensure stable operation of the motor under complex load conditions.
5. **LED drive circuit**:
- Due to the low on-resistance and stable current control capability of SI4882DY-T1-E3-VB, it also performs well in LED drive applications. Especially in high-efficiency lighting systems, it can stably regulate LED current, extend the service life of LEDs and improve overall energy efficiency.
6. **Current and overvoltage protection module**:
- SI4882DY-T1-E3-VB is also suitable for current and overvoltage protection circuits. Due to its low Vth and high current capability, it can react quickly when circuit abnormalities occur and protect the system from damage, and is widely used in battery protection, charging management, and power monitoring systems.
By adopting SI4882DY-T1-E3-VB, designers can achieve high-efficiency, low-power electrical design in multiple fields, especially for power management systems that require high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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