Product introduction：
Product Introduction:
**SI4876DY-T1-E3-VB** is a high-performance single N-channel power MOSFET in SOP8 package, suitable for high-efficiency low-voltage switching applications. The MOSFET has a drain-source voltage (V_DS) of 20V, can withstand a drain current (I_D) of up to 15A, and its gate-source voltage (V_GS) range is ±12V. Its switching threshold voltage (V_th) is between 0.5V and 1.5V, which means that the MOSFET can be started at a low voltage and is suitable for low-voltage systems. RDS(ON) is 8mΩ (V_GS = 2.5V) and 6mΩ (V_GS = 4.5V), with very low on-resistance, ensuring high-efficiency power transmission and low energy loss. Using Trench technology, performance and on-resistance are optimized, and it is widely used in consumer electronics, load switching, battery management and other applications requiring efficient power switching.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
20V |
|
0.5~1.5V |
15A |
8mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
20V |
|
0.5~1.5V |
15A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
20V |
|
0.5~1.5V |
15A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Model**: SI4876DY-T1-E3-VB
- **Package**: SOP8
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (V_DS)**: 20V
- **Gate-Source Voltage (V_GS)**: ±12V
- **Switching Threshold Voltage (V_th)**: 0.5V to 1.5V
- **On-Resistance (R_DS(ON))**:
- 8mΩ (V_GS = 2.5V)
- 6mΩ (V_GS = 4.5V)
- **Maximum Drain Current (I_D)**: 15A
- **Technology**: Trench technology
- **Maximum Power Dissipation (P_D)**: Depending on the actual application environment, the power dissipation will vary according to the current and operating voltage.
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples:
1. **Battery Management System (BMS)**:
Due to its ultra-low on-resistance and low switching threshold, SI4876DY-T1-E3-VB performs well in battery management systems, especially in switching applications that require high efficiency and low loss. During the battery charging and discharging process, this MOSFET can effectively control the flow of current and reduce power loss, thereby improving the efficiency and life of the battery.
2. **Consumer Electronics**:
SI4876DY-T1-E3-VB is suitable for various consumer electronic devices, such as smartphones, tablets, wearable devices, etc. These devices usually require an efficient power management system. The low RDS(ON) and high switching speed of MOSFET ensure efficient energy transmission, reduce heat generation of the equipment, and improve the reliability and stability of the system.
3. **Low Voltage Power Management and DC-DC Converter**:
In the field of low voltage power management, SI4876DY-T1-E3-VB is used in DC-DC converter circuits, especially in applications that require high frequency switching and low voltage operation. It can provide efficient current transmission, help improve conversion efficiency, and reduce heat and power loss in the power supply, especially in portable devices and compact designs.
4. **Load Switching and Switching Power Supply**:
This MOSFET can play a vital role in load switching systems, especially in situations where high efficiency and high reliability are required. It has fast switching characteristics and low on-resistance, making it suitable for use as a load switch, thereby ensuring fast response and stability of the system.
5. **High Efficiency LED Drive Circuit**:
SI4876DY-T1-E3-VB is also suitable for LED drive circuits, especially in applications that require low conduction losses and high efficiency. Its low RDS(ON) characteristic can reduce the loss of driving current, thereby improving the brightness and power efficiency of LEDs, and is widely used in display screens and lighting systems.
6. **Automotive Electronic Systems**:
This MOSFET is also suitable for automotive electronic applications, especially in modules such as electric drive systems, sensor power supplies, and battery management. In these applications, low on-resistance can ensure efficient operation of the system, avoid power loss, and improve system reliability and durability.
Overall, **SI4876DY-T1-E3-VB** is suitable for various low-voltage, high-efficiency switching applications due to its low RDS(ON), high current carrying capacity, and wide operating voltage range, especially in portable power supplies, battery management, and high-efficiency load switches. It has broad application potential.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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