Product introduction：
Product Introduction
**SI4874DY-T1-E3-VB** is a high-performance N-Channel MOSFET in SOP8 package, suitable for low-voltage and high-efficiency switching circuits. This MOSFET is manufactured using Trench technology and has excellent conductivity and low on-resistance, which is 11mΩ and 8mΩ at 4.5V and 10V gate voltages respectively, and can provide efficient current conduction under high frequency and high load conditions. The maximum drain-source voltage (VDS) is 30V, the maximum gate-source voltage (VGS) is ±20V, and the maximum drain current (ID) is 13A, which is suitable for various power management, switching circuits, and current control of other small electronic devices.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI4874DY-T1-E3-VB
- **Package type**: SOP8
- **Configuration**: Unipolar N-Channel
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.7V
- **RDS(ON) on-resistance**:
- Under 4.5V gate voltage: 11mΩ
- Under 10V gate voltage: 8mΩ
- **ID (maximum drain current)**: 13A
- **Technology**: Trench (channel process)
Domain and module applications：
Applications and module examples
1. **Power management**: In efficient power management systems, SI4874DY-T1-E3-VB, as a low on-resistance MOSFET, can be used in power modules such as DC-DC converters and AC-DC adapters. Its low RDS(ON) ensures that the system can convert efficiently and reduce energy loss, and is particularly suitable for high-frequency switching power applications.
2. **Battery-powered systems**: This MOSFET can be used in battery charge management and battery protection circuits, such as battery protection and battery management systems (BMS) for portable devices. Low on-resistance helps reduce heat in the system and improve overall battery efficiency and endurance.
3. **Consumer electronics**: Suitable for power conversion systems in consumer electronics such as smartphones, tablets, and laptops. The efficient switching characteristics and low power consumption of SI4874DY-T1-E3-VB enable it to increase battery life and optimize power efficiency.
4. **Automotive electronics**: In automotive electrical systems, especially in electric power steering (EPS) and on-board power management systems, SI4874DY-T1-E3-VB can be used for efficient switching and voltage conversion, ensuring efficient and stable current transmission, and improving the performance and reliability of the overall on-board system.
5. **LED driver**: In LED driver power modules, the low on-resistance of MOSFET makes it particularly suitable for high-efficiency, constant-current LED drive circuits, providing stable current transmission and reducing heat loss.
6. **Power tools**: This MOSFET can be used in battery management and power control systems of power tools to ensure efficient current transmission and low heat loss, ensuring long-term stable operation of power tools.
The low on-resistance and high current carrying capacity of SI4874DY-T1-E3-VB enable it to perform well in power management, switching circuits and other fields that require high efficiency and low energy loss. It is suitable for key applications in various consumer electronics, automotive electronics, power tools and power modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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