Product introduction：
Product Introduction (SI4864DY-T1-E3)
SI4864DY-T1-E3 is a high-performance MOSFET produced by Vishay, using SOP8 package, single N-channel configuration, designed for high-efficiency power control and switching applications. This MOSFET has a low on-resistance (RDS(ON)), which can effectively reduce power loss and support a higher current carrying capacity (maximum 18A). Its drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) is ±20V, and the switching threshold voltage (Vth) is 1.7V, which meets the needs of most low-voltage high-power applications. SI4864DY-T1-E3 uses Trench technology, providing excellent switching speed and low switching loss, suitable for multiple applications such as power management, battery management, motor drive and LED drive.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI4864DY-T1-E3
- **Package**: SOP8
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Switching threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @VGS = 4.5V
- 4mΩ @VGS = 10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Applications and modules
SI4864DY-T1-E3 has the characteristics of low on-resistance and high efficiency, and is suitable for a variety of power switching and power management applications. The following are some typical application areas and modules:
1. **Power management and DC-DC converter**
The low RDS(ON) of SI4864DY-T1-E3 makes it very effective in power management systems, especially in DC-DC converters and regulators. Its low loss characteristics help to improve conversion efficiency and reduce heat generation, and it is widely used in notebook power adapters, industrial power supplies and other fields.
2. **LED drive circuit**
In LED drive applications, MOSFET needs to maintain low loss at high switching frequencies. SI4864DY-T1-E3 can ensure high-efficiency operation of LED drive circuits due to its excellent conduction performance and low on-resistance, especially in high-power LED lighting and backlight systems.
3. **Motor drive control**
In applications such as power tools, electric fans, and automotive electric drive systems, SI4864DY-T1-E3, as a power switch element, can provide fast switching capabilities and high current carrying capacity, and is particularly suitable for use in motor control circuits to improve drive efficiency and control accuracy.
4. **Battery management in consumer electronics**
For the battery management system of smartphones, tablets, and other portable devices, SI4864DY-T1-E3 provides a reliable power management solution. Its low power consumption and high efficiency characteristics help extend battery life and improve the overall performance of the device.
5. **Battery charger and power protection**
In battery management applications such as battery chargers and battery protection boards, SI4864DY-T1-E3 can provide stable power control, ensure current stability during charging, prevent battery overcharge or over discharge, and protect battery safe operation.
6. **Power amplifier and RF applications**
In RF and communication equipment, the high-efficiency switching performance of SI4864DY-T1-E3 makes it widely used in power amplifiers, especially in communication systems, wireless devices and signal amplification circuits, which can improve power conversion efficiency.
In summary, SI4864DY-T1-E3 is a MOSFET that is very suitable for applications with high efficiency, low power loss and high current requirements, and can provide reliable power supply and power management solutions in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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