Product introduction：
Product Introduction:
SI4858DY-T1-E3-VB is a single N-channel MOSFET in SOP8 package, suitable for low-voltage and high-efficiency switching applications. Its maximum drain-source voltage (V_DS) is 30V, and its maximum gate-source voltage (V_GS) is ±20V, which is suitable for a variety of low-power circuit designs. Based on Trench technology, this product has excellent conduction performance, with a minimum on-resistance (R_DS(ON)) of 4mΩ (at V_GS=10V), and can provide a maximum drain current (I_D) of up to 18A. Its low on-resistance and small Vth (1.7V) make it very suitable for use in applications such as high-efficiency power conversion, drive circuits, and signal processing.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Model**: SI4858DY-T1-E3-VB
- **Package**: SOP8
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 5mΩ @ V_GS = 4.5V
- 4mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 18A
- **Technology**: Trench technology
- **Maximum power loss**: Depending on the heat dissipation conditions and applications, the power loss is usually affected by R_DS(ON) when operating at rated current.
Domain and module applications：
Application areas and modules:
1. **Power management and DC-DC converters**:
- SI4858DY-T1-E3-VB is often used in high-efficiency DC-DC power converters due to its low on-resistance (R_DS(ON)) and high drain current capability. Its low R_DS(ON) makes the power conversion more efficient and reduces energy waste, and is suitable for power applications with a wide input voltage range of 5V to 30V.
2. **Battery-powered systems**:
- In battery-powered systems such as mobile devices and handheld devices, SI4858DY-T1-E3-VB can effectively reduce power consumption and extend battery life. The low R_DS(ON) feature ensures the battery's energy conversion efficiency during operation and provides stable current control during charging and discharging.
3. **Motor drive circuit**:
- In the motor control system, SI4858DY-T1-E3-VB can provide precise current drive and is suitable for brushless DC motor (BLDC) drive circuit. The fast switching characteristics and high current carrying capacity of this MOSFET ensure the high efficiency and stable operation of the motor drive system.
4. **High-frequency switching power supply (SMPS)**:
- As an efficient switching element, SI4858DY-T1-E3-VB is suitable for high-frequency switching power supply applications. Its low on-resistance and fast response characteristics enable it to perform well in high-frequency working environments, effectively reduce switching losses, and improve power conversion efficiency.
5. **LED drive circuit**:
- The low R_DS(ON) and high withstand voltage characteristics of this MOSFET make it widely used in LED drive circuits, which can stably adjust the LED operating current and ensure the stable operation and long service life of LED lamps.
6. **Current Protection and Overvoltage Protection Module**:
- SI4858DY-T1-E3-VB's low Vth and high current capability make it suitable for current and overvoltage protection modules. Its high reliability makes it suitable for the implementation of circuit protection functions to prevent overcurrent and overvoltage from damaging critical circuits.
By using SI4858DY-T1-E3-VB, system designers can achieve high-efficiency, low-power electronic design in multiple fields, improve overall system performance, and reduce energy consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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