Product introduction：
**SI4854DY-T1-E3-VB MOSFET Product Introduction**
**Model**: SI4854DY-T1-E3-VB
**Package Type**: SOP8
**Configuration**: Dual-N+N-Channel
**Technology**: Trench
**Operating Voltage**: 30V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.7V
**On-Resistance (RDS(ON))**:
- 20mΩ @VGS=4.5V
- 16mΩ @VGS=10V
**Maximum Drain Current (ID)**: 8.5A
**Application Areas**:
This MOSFET is suitable for low-voltage and high-efficiency power management circuits, such as power conversion of battery-driven equipment, high-speed switching power supplies, load lighting circuits, stepper motor drives, and low-voltage high-frequency switching applications. Its low RDS(ON) value makes it exhibit lower heat loss at high currents, making it suitable for high-efficiency circuit design.
---
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
**SI4854DY-T1-E3-VB MOSFET Detailed Parameter Description**
- **Package Type**: SOP8 (small package, suitable for high-density applications, suitable for surface mount technology)
- **Configuration**: Dual N-type + N-type channel configuration, suitable for bridge circuits and dual-channel load drive circuits.
- **VDS (drain-source voltage)**: 30V, suitable for low-voltage applications such as small power modules or low-voltage DC-DC converters.
- **VGS (gate-source voltage)**: ±20V, supports a wide gate drive voltage range.
- **Vth (threshold voltage)**: 1.7V, indicating that when the gate-source voltage reaches 1.7V, the MOSFET starts to turn on, suitable for low-voltage control systems.
- **RDS(ON)**:
- **20mΩ @VGS=4.5V**: Suitable for medium voltage drive applications, with lower on-resistance and reduced power loss.
- **16mΩ @VGS=10V**: Lower on-resistance under high voltage drive, suitable for high current applications, effectively improving circuit efficiency.
- **ID (drain current)**: 8.5A, suitable for high current load, widely used in low voltage high-efficiency power conversion and switching circuits.
---
Domain and module applications：
**Application fields and modules of SI4854DY-T1-E3-VB MOSFET**
1. **Power management module**:
- In the high-efficiency power management module, the low RDS(ON) characteristics of SI4854DY-T1-E3-VB enable it to show excellent energy efficiency under high current load, especially suitable for DC-DC converters, buck converters (Buck Converter) and boost converters (Boost Converter).
- In the battery management system, as a switching device, it can provide efficient power conversion and extend battery life.
2. **Load drive circuit**:
- The dual N-type + N-type channels configured by this MOSFET are suitable for driving symmetrical loads, especially for stepper motor drive circuits, servo motor control systems, and other high-efficiency power switches in automation equipment.
- The low Vth and low on-resistance characteristics enable it to have low power consumption and high response speed during motor starting and operation.
3. **Automotive electronics**:
- In automotive electronic systems, such as on-board DC-DC converters, LED driver modules, etc., the low VDS and low on-resistance of SI4854DY-T1-E3-VB make it ideal for high-efficiency power supply and load regulation.
4. **Communication equipment**:
- This MOSFET can also be used for high-efficiency power conversion applications in communication equipment, especially where fast switching and high-frequency operation are required. Its excellent thermal performance and low on-resistance reduce system heating and power consumption in such applications.
5. **Consumer electronics**:
- In consumer electronics such as smartphones, tablets, and wearable devices, MOSFETs are used for power management, fast switching of power, and help improve device battery life and operating efficiency.
Through the optimized design of low Vth and RDS(ON), SI4854DY-T1-E3-VB provides high-performance and high-reliability solutions in many fields, especially suitable for switching circuits in high current and low voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
