Product introduction：
Product Introduction:
**SI4850DY-T1-VB** is a single N-channel power MOSFET in SOP8 package with low RDS(ON) characteristics, suitable for high-efficiency switching applications. It has a drain-source voltage (V_DS) of 60V, a maximum gate-source voltage (V_GS) of ±20V, and a switching threshold voltage (V_th) of 1.7V. This MOSFET uses Trench technology to optimize its on-resistance, with RDS(ON) of 35mΩ (V_GS = 4.5V) and 25mΩ (V_GS = 10V), respectively, and can provide a maximum current carrying capacity (I_D) of 7.6A. Due to its low on-resistance and high efficiency, it is suitable for power management, motor drive, and load switching applications that require high power density and high efficiency.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
60V |
|
1.7V |
7.6A |
|
|
25mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
60V |
|
1.7V |
7.6A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
60V |
|
1.7V |
7.6A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Model**: SI4850DY-T1-VB
- **Package**: SOP8
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Switching threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 35mΩ (V_GS = 4.5V)
- 25mΩ (V_GS = 10V)
- **Maximum drain current (I_D)**: 7.6A
- **Technology**: Trench technology
- **Maximum power dissipation (P_D)**: The power loss will vary depending on the specific application environment.
- **Operating temperature range**: Typical operating temperature range is -55°C to +150°C
Domain and module applications：
Application fields and module examples:
1. **Power management and conversion**:
This MOSFET is widely used in DC-DC converters and power factor correction (PFC) circuits. Due to its low RDS(ON) value and high current carrying capacity, it can effectively reduce power loss and improve the overall efficiency of the power supply.
2. **Motor drive**:
In applications such as power tools and household appliances, SI4850DY-T1-VB can provide efficient motor drive, especially when high starting torque and stable working conditions are required.
3. **Load switching and switching power supply**:
In switching power supply and load switching systems, the high switching speed and low on-resistance of MOSFET make it very suitable for fast switching, reducing energy loss and improving system efficiency.
4. **LED lighting drive**:
For LED lighting drive systems, the low on-resistance of MOSFET ensures less heat loss and extends the service life of the equipment. Especially in high-frequency switching power supplies, it can provide stable power output and avoid overheating problems.
5. **Automotive Electronic Systems**:
In the field of automotive electronics, especially for battery management systems (BMS) and on-board electric systems, SI4850DY-T1-VB can support high-frequency switching and stable power conversion due to its high efficiency and durability.
These applications can benefit from MOSFET's low on-resistance, high switching efficiency and high load capacity, ensuring that the system operates under high efficiency and low energy consumption conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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