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SI4838BDY-T1-GE3-VB Product details

Product introduction:

Product Introduction (SI4838BDY-T1-GE3)

SI4838BDY-T1-GE3 is a high-performance MOSFET (field effect transistor) produced by Vishay, using SOP8 package and single N-channel configuration. The device has a very low on-resistance (RDS(ON)), which can effectively reduce power loss and is particularly suitable for high-efficiency and high-power applications. Its rated drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) is ±20V, the switching threshold voltage (Vth) is 1.7V, and the maximum continuous leakage current (ID) is 25A. This MOSFET adopts Trench technology, has good high-frequency response and high efficiency, and is widely used in power management, LED driving, DC-DC converters and various power amplifiers.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 25A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 25A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 25A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Model**: SI4838BDY-T1-GE3
- **Package**: SOP8
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Switching threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4mΩ @VGS = 4.5V
- 3mΩ @VGS = 10V
- **Maximum leakage current (ID)**: 25A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C

Domain and module applications:

Application fields and modules

The characteristics of SI4838BDY-T1-GE3 make it very suitable for the following fields and modules:

1. **Power management system**
Due to its low RDS(ON) value, SI4838BDY-T1-GE3 can effectively reduce power loss and improve the energy efficiency of the system, so it is often used in various power management modules, including DC-DC converters, voltage regulators, boost and buck power supply designs.

2. **LED drive circuit**
In LED drive applications, SI4838BDY-T1-GE3 can provide stable current regulation due to its excellent switching performance and low on-resistance, ensuring long-term and efficient operation of LEDs, and is suitable for various LED lighting and backlight applications.

3. **Motor drive control**
In motor drive modules, the fast switching characteristics and high current carrying capacity of MOSFET enable SI4838BDY-T1-GE3 to efficiently control the start and stop of the motor, which is commonly found in fans, power tools, electric vehicle drive systems, etc.

4. **Consumer electronics**
In battery management and power regulation modules for consumer electronics such as smartphones, tablets, and laptops, SI4838BDY-T1-GE3 provides low-power, high-efficiency solutions to extend battery life and ensure stable system operation.

5. **Battery chargers and battery management systems**
Its high efficiency and fast response characteristics make this MOSFET widely used in chargers and battery management systems. Through effective power control, it ensures high efficiency and safety during battery charging.

6. **Power Amplifier and RF Applications**
In RF applications and power amplifiers, SI4838BDY-T1-GE3 can achieve efficient power conversion and signal amplification, especially in communication equipment, it can provide excellent performance.

With its ultra-low on-resistance and excellent switching performance, SI4838BDY-T1-GE3 provides a reliable solution for various applications with high power and high efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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