Product introduction：
Product Introduction
**SI4836DY-T1-E3-VB** is a single-channel N-type MOSFET in **SOP8 package**, designed for low voltage, high current applications, with extremely low on-resistance (R_DS(ON)) and excellent switching characteristics. The **V_DS (drain-source voltage)** of this MOSFET is **30V**, which is very suitable for medium and low voltage power management, power conversion and drive applications. Its **V_GS (gate-source voltage)** can be up to **±20V**, which is suitable for use in power systems that require precise control.
Using **Trench technology**, SI4836DY-T1-E3-VB has a very low **on-resistance (R_DS(ON))**, which is **4mΩ (V_GS = 4.5V)** and **3mΩ (V_GS = 10V)**, respectively, which makes it have extremely low power loss in high current applications, improving the efficiency and stability of the overall system. Its maximum drain current (I_D) can reach **25A**, which is very suitable for power conversion, drive and power switching applications that require high current support.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
25A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Main parameter description
| **Parameter** | **Value** |
|-----------------|------------------------|
| **Package** | SOP8 |
| **Configuration** | Single channel N-type MOSFET |
| **V_DS (drain-source voltage)** | 30V |
| **V_GS (gate-source voltage)** | ±20V |
| **V_th (threshold voltage)** | 1.7V |
| **R_DS(ON) (on-resistance)** | 4mΩ (V_GS = 4.5V), 3mΩ (V_GS = 10V) |
| **I_D (drain current)** | 25A |
| **Technology** | Trench |
Domain and module applications：
Application fields and modules
1. **Power management and DC-DC converters**
SI4836DY-T1-E3-VB's low on-resistance makes it very suitable for **DC-DC converters** and **power regulators**, which can effectively reduce power loss and improve efficiency. In **battery-powered devices**, **power adapters**, **mobile electronic devices**, the power modules can significantly increase battery life and improve the energy efficiency of the power system.
2. **Battery Management System (BMS)**
In **battery management systems (BMS), the low on-resistance and high current carrying capacity of SI4836DY-T1-E3-VB can ensure efficient battery charge and discharge control, reduce energy loss and improve battery charging efficiency. It is widely used in **electric vehicles (EVs)**, **energy storage systems**, **solar energy storage systems** and other fields, effectively improving the overall performance and reliability of battery management systems.
3. **Electric drive system**
In **electric drive system**, SI4836DY-T1-E3-VB can be used as a power switch to provide precise current control, suitable for **electric vehicles**, **power tools**, **robot drive system** and other applications. Low on-resistance ensures reduced losses during high current transmission, improves the efficiency of the electric drive system, and extends the service life of the system.
4. **LED drive and lighting system**
Due to its low power consumption, SI4836DY-T1-E3-VB can be used as a switching element in **LED drive system** to accurately control current, reduce power loss and improve the brightness and stability of LED. This MOSFET is very suitable for **indoor and outdoor LED lighting systems**, **automotive LED lighting**, **display backlight** and other fields.
5. **Consumer electronics**
In **consumer electronics**, SI4836DY-T1-E3-VB can be used in battery-driven devices and power management systems, especially in situations where high performance and low power consumption are required. It can be applied to the battery management and power control parts of devices such as **smartphones, tablets, and laptops** to improve battery life and device operating efficiency.
6. **Audio and power amplification applications**
In **audio power amplifiers** and high-power applications, SI4836DY-T1-E3-VB can be used as a switching element to provide low-loss, high-efficiency current transmission during the power amplification process. Especially in high-power applications such as **sound systems, power amplifiers, and broadcasting equipment**, MOSFET can ensure clear audio output and reduce power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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