Product introduction：
**Si4776DY-T1-GE3-VB MOSFET Product Introduction**
The Si4776DY-T1-GE3-VB is a **single N-channel MOSFET** in a **SOP8 package**, designed for high-efficiency power management and power control applications. With a **30V drain-source voltage (VDS)** and **13A maximum drain current (ID)**, the device provides excellent performance at higher currents and lower voltages. Its **VGS** range is **±20V**, suitable for a variety of power supply and drive circuit designs.
The **threshold voltage (Vth)** of this MOSFET is **1.7V**, enabling it to respond quickly and adapt to low voltage operations. **RDS(ON)** (on-resistance) is **11mΩ** at **VGS=4.5V**, and **8mΩ** at **VGS=10V**, showing very low conduction loss, ensuring high current carrying capacity while reducing energy waste. This product adopts **Trench technology**, with low switching loss and high working efficiency, which is very suitable for efficient power management and high power conversion applications.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
**Detailed parameter description**
| **Parameter** | **Value** |
|-------------------------|-------------------------------------------------|
| **Package type** | SOP8 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 11mΩ @ VGS=4.5V；8mΩ @ VGS=10V |
| **Maximum drain current (ID)** | 13A |
| **Technology** | Trench technology|
| **Switching speed** | High-speed switching characteristics|
Domain and module applications：
**Application fields and module examples**
**1. Power management system**
- **DC-DC converter**: Si4776DY-T1-GE3-VB has very low **on-resistance (RDS(ON) = 8mΩ)** and high current carrying capacity, suitable for **DC-DC converter**. It can improve conversion efficiency and reduce heat generation in power conversion, and is widely used in **portable devices**, **industrial power** and **high-efficiency power management** systems.
- **Battery management system (BMS)**: In the **battery management system (BMS), Si4776DY-T1-GE3-VB improves the efficiency of the charging and discharging process through its low loss characteristics, especially suitable for **power tools** and **electric vehicles** (such as electric motorcycles, electric bicycles) and other fields that require efficient energy management.
**2. Motor drive**
- **Power tool drive**: Si4776DY-T1-GE3-VB can effectively drive **motor** in power tools due to its **low on-resistance** and **high current carrying capacity**, reduce power loss, and enhance the accuracy of motor control. It is especially suitable for **power tools** (such as electric drills, electric saws) and **industrial equipment** drive systems.
- **Electric Vehicles (EVs)**: This MOSFET can also provide high efficiency in **electric vehicle** motor drive systems, help achieve efficient energy conversion and motor control, and improve vehicle endurance and power performance.
**3. High-frequency switching power supply**
- **Synchronous rectification power supply**: Si4776DY-T1-GE3-VB is very suitable for use as a switching element in **synchronous rectification power supply**. Its low on-resistance and high current capability significantly improve power conversion efficiency, especially for **AC-DC converters**, **DC-DC converters** and **LED driver power**.
- **Industrial power systems**: This MOSFET can also be used in **industrial power systems** to help optimize the efficiency of power modules and reduce heat loss, suitable for **UPS systems**, **industrial control systems** and **high-power computer power**.
**4. Consumer electronics**
- **Portable devices and smartphones**: Due to its ultra-low on-resistance and high efficiency, the Si4776DY-T1-GE3-VB is suitable for consumer electronics such as **smartphones**, **tablets** and **smart home devices**, especially in **battery management systems**, which can improve charging and discharging efficiency and extend battery life.
- **Mobile power bank (power bank)**: In **mobile power banks**, the low on-resistance of the Si4776DY-T1-GE3-VB helps improve charging efficiency, especially in portable power banks that support **fast charging technology**, enabling faster and more efficient battery charging.
**5. Wireless communications**
- **Wireless device power management**: The low on-resistance and high current carrying capacity of this MOSFET make it widely used in **wireless communication devices**, especially in power modules for devices such as **Wi-Fi routers**, **Bluetooth devices** and **wireless headsets**, providing efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
