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SI4736DY-T1-E3-VB Product details

Product introduction:

**Product Introduction**

SI4736DY-T1-E3-VB is a single N-type MOSFET in SOP8 package with a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of up to 13A. This MOSFET adopts Trench technology and has a very low on-resistance of 11mΩ at VGS=4.5V and 8mΩ at VGS=10V. The low RDS(ON) and high current carrying capacity of SI4736DY-T1-E3-VB make it very suitable for power switching, synchronous rectification, DC-DC converters and other fields, especially in power supply systems with high efficiency requirements. Its low on-resistance characteristic not only improves the energy efficiency of the system, but also reduces power loss and heat generation.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
**Detailed parameter description**

- **Model:** SI4736DY-T1-E3-VB
- **Package:** SOP8
- **Configuration:** Single N-type MOSFET
- **Maximum drain-source voltage (VDS):** 30V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Maximum drain current (ID):** 13A
- **Technology:** Trench
- **Operating temperature range:** -55°C to 150°C
- **Features:** Low on-resistance, low power consumption, high current carrying capacity, suitable for high-efficiency switching applications
- **Application areas:** Power management, DC-DC conversion, battery management, synchronous rectification, load switching

Domain and module applications:

**Application fields and module examples**

1. **Power management and DC-DC converters**
SI4736DY-T1-E3-VB excels in power management and DC-DC converters due to its low on-resistance and high current handling capability. MOSFET can be used in synchronous rectification to improve power conversion efficiency, especially to reduce heat generation under high load conditions. It is suitable for use in high-efficiency power systems such as computer power supplies, communication equipment power supplies, and battery-powered devices.

2. **Synchronous rectification and power conversion**
In synchronous rectification, MOSFET plays a key role, especially in application scenarios requiring efficient power conversion. The low RDS(ON) characteristics of SI4736DY-T1-E3-VB minimize energy conversion losses in synchronous rectification. It is suitable for various power modules, can improve system efficiency and reduce energy losses, and is widely used in power conversion circuits such as boost, buck, and inverter converters.

3. **Battery Management System (BMS)**
SI4736DY-T1-E3-VB is also suitable for battery management systems, especially in applications that require fast switching and low power consumption. Battery management systems often require efficient switching elements to manage the charging and discharging process. The low on-resistance characteristics of MOSFET help reduce power loss, extend battery life, and ensure stable operation of the system. It is widely used in electric vehicles (EV), power tools, and renewable energy systems.

4. **Load Switch and Power Management Module**
MOSFET, as a load switch, can efficiently control the flow of current and plays a vital role in the power management module. SI4736DY-T1-E3-VB is suitable for controlling high-current loads, such as high-efficiency home appliances, automotive power supplies, industrial equipment, etc. Its low on-resistance ensures stable operation of the system under high loads and reduces energy loss.

5. **Communications and Consumer Electronics**
In communications and consumer electronics, SI4736DY-T1-E3-VB can be used in power management and battery-powered devices. Due to its high performance and low power consumption, it is particularly suitable for portable devices such as smartphones, laptops, tablets, etc., which have high requirements for battery life and thermal control.

6. **Automotive Electronics Applications**
In automotive electronic systems, SI4736DY-T1-E3-VB can be used as a power management switch and is widely used in vehicle power modules, battery management systems (BMS), and electric vehicle charging management systems. Due to its high current carrying capacity and low power consumption, this MOSFET provides efficient power conversion and energy management functions for various electrical systems in automotive electronics.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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