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SI4642DY-T1-E3-VB Product details

Product introduction:

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SI4642DY-T1-E3-VB is a high-performance N-channel MOSFET in a SOP8 package designed for low-voltage, high-current applications. The device has a maximum drain-source voltage (VDS) of 30V and a drain current (ID) of 25A. With its extremely low on-resistance (RDS(ON) of 3mΩ@VGS=10V and 4mΩ@VGS=4.5V), it can significantly reduce power losses and improve efficiency, and is suitable for a variety of applications such as high-frequency switching power supplies and load control. Using Trench technology, SI4642DY-T1-E3-VB provides fast switching speeds and excellent thermal management performance, and is particularly suitable for efficient power conversion and drive systems that require high current handling.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 25A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 25A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 25A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
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- **Package:** SOP8
- **Configuration:** Single N-channel
- **VDS:** 30V
- **VGS:** ±20V
- **Vth:** 1.7V
- **RDS(ON):**
- 3mΩ@VGS=10V
- 4mΩ@VGS=4.5V
- **ID:** 25A
- **Technology:** Trench technology, low RDS(ON), suitable for efficient power management and load control applications.

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Domain and module applications:

For example: **
SI4642DY-T1-E3-VB is suitable for a variety of applications requiring high current and high efficiency, especially in power management and switch control systems. In **DC-DC converters**, it can efficiently convert power, optimize power loss, and improve conversion efficiency. It is especially suitable for power management modules in **portable electronic devices**, **communication equipment**, **home appliances** and other products.

In addition, SI4642DY-T1-E3-VB is also suitable for **battery management systems**, such as **power tools**, **drones**, **electric vehicles** and other equipment to ensure efficient power conversion during charging and discharging. Due to its low RDS(ON) value, this MOSFET can reduce energy losses and provide excellent performance in efficient current switching.

This MOSFET can also play an important role in **LED drive circuits**, especially in applications requiring high power output and precise control, enabling precise current control and improving the efficiency and stability of lighting systems. In **motor drive systems**, it can handle higher currents, ensuring stable motor operation and low power consumption.

SI4642DY-T1-E3-VB is also widely used in **high-efficiency power amplifiers**, **smart home power supplies** and **power distribution modules**, providing reliable, low-power power solutions to meet the stringent requirements of modern electronic products for energy efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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