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Si4618DY-T1-GE3-VB Product details

Product introduction:

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Si4618DY-T1-GE3-VB is a half-bridge N+N channel MOSFET in a SOP8 package, designed for high-efficiency power switching applications. The device supports a maximum drain-source voltage (VDS) of 30V and a drain current (ID) of 6.8A (N channel)/10A (N channel). Its low on-resistance (RDS(ON)) is 18mΩ (VGS=10V) and 21.6mΩ (VGS=4.5V), respectively, which enables it to have excellent performance in high-efficiency power conversion and load control applications. Si4618DY-T1-GE3-VB uses Trench technology, which provides lower conduction losses, fast switching response and excellent thermal management, and is suitable for various types of high-efficiency power management, switch control and drive circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 6.8/10A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Half-Bridge-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 6.8/10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Half-Bridge-N+N 30V 1.7V 6.8/10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Half-Bridge-N+N
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- **Package:** SOP8
- **Configuration:** Half-bridge N+N-channel
- **VDS:** 30V
- **VGS:** ±20V
- **Vth:** 1.7V
- **RDS(ON):**
- 18mΩ@VGS=10V
- 21.6mΩ@VGS=4.5V
- **ID:**
- 6.8A (N-channel)
- 10A (N-channel)
- **Technology:** Trench technology, low RDS(ON), suitable for high-efficiency power management and load control applications.

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Domain and module applications:

For example: **
The half-bridge configuration of Si4618DY-T1-GE3-VB enables it to perform well in many applications that require positive and negative current control. In **DC-DC converters**, it can effectively control power conversion and improve the energy efficiency of the system, especially for low-power and high-frequency applications, such as power management modules in **communication equipment**, **consumer electronics**, and **home appliances**. This MOSFET can efficiently switch and manage electrical energy, and also performs well in **battery management systems** (such as power tools, drones, and portable electronic devices), helping to improve battery efficiency and extend its service life.

Due to its low RDS(ON) value and fast switching characteristics, Si4618DY-T1-GE3-VB is also widely used in **battery management systems** and **DC motor drive systems** of **electric vehicles**, especially in batteries and motor control systems that require high efficiency and high reliability. Its low on-resistance and high current carrying capacity also make it suitable for applications such as **LED drive circuits** and **power amplifiers**, providing stable power output and energy conversion.

In addition, Si4618DY-T1-GE3-VB can be applied to power management of **smart home devices**, such as **smart sockets** and **power distribution modules**, to ensure efficient use of energy and meet the requirements of modern smart devices for low power consumption and long life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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