Featured Model

Your present location > Home page > Featured Model

SI4501ADY-T1-E3-VB Product details

Product introduction:

SI4501ADY-T1-E3-VB MOSFET Product Introduction

**SI4501ADY-T1-E3-VB** is a dual N+P channel MOSFET, using SOP8 package, with bipolar working capability, suitable for high-efficiency power switching and power management applications. This MOSFET integrates two MOSFET elements, N-channel and P-channel structures, capable of providing a drain-source voltage (VDS) of ±30V and a maximum continuous drain current (ID) of ±10A. Among them, the N-channel part and the P-channel part have very low on-resistance (RDS(ON)), 11mΩ (at VGS = 10V) and 13mΩ (at VGS = 4.5V) for the N-channel, and 21mΩ (at VGS = 10V) and 28mΩ (at VGS = 4.5V) for the P-channel, which makes the MOSFET have lower power loss and higher efficiency during the switching process.

The threshold voltage (Vth) of this MOSFET is 1.8V for the N-channel and -1.7V for the P-channel, respectively. It can start to conduct at a lower gate voltage, reducing switching losses. It adopts Trench technology and has efficient switching performance, suitable for high-frequency power supplies and various power conversion applications.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.8/-1.7V 10/-8A 11/21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.8/-1.7V 10/-8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.8/-1.7V 10/-8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
Detailed parameter description

- **Package type**: SOP8
- **Configuration type**: Dual-N+P-Channel
- **Drain-source voltage (VDS)**: ±30V (maximum rated voltage)
- **Gate-source voltage (VGS)**: ±20V (maximum rated voltage)
- **Threshold voltage (Vth)**:
- N-channel: 1.8V (minimum gate voltage required to turn on MOSFET)
- P-channel: -1.7V (minimum gate voltage required to turn on MOSFET)
- **On-resistance (RDS(ON))**:
- N-channel: 13mΩ (at VGS = 4.5V), 11mΩ (at VGS = 10V)
- P-channel: 28mΩ (at VGS = 4.5V) ), 21mΩ (at VGS = 10V)
- **Continuous Drain Current (ID)**:
- N-Channel: 10A
- P-Channel: -8A
- **Technology**: Trench Technology

Domain and module applications:

Application fields and module examples

1. **Power management module**: SI4501ADY-T1-E3-VB is suitable for various power management modules, especially in applications requiring low on-resistance and high efficiency. Its dual N+P channel configuration allows it to be used as an efficient power switching device for DC-DC converters, AC-DC power adapters, and power factor correction (PFC) circuits. N channel is used for high-side switching and P channel is used for low-side switching to help improve overall power conversion efficiency.

2. **Battery management system**: In the battery management system (BMS), SI4501ADY-T1-E3-VB can be used as a core component of the battery protection circuit. Its bipolar characteristics enable it to efficiently switch current between positive and negative poles, making it suitable for battery charge and discharge management to avoid damage from overcharging, over-discharging and overcurrent. It is particularly suitable for battery management modules in power tools, electric vehicles (EVs) and energy storage systems.

3. **Load switch**: SI4501ADY-T1-E3-VB can be used as a load switch circuit, especially in load switching applications that require low voltage drive and high efficiency. Its dual N+P configuration can switch at the high and low ends simultaneously, optimize switch control, ensure the stability and safety of the load, and is widely used in battery power management, electric vehicles and other high-efficiency devices.

4. **DC-DC converter**: This MOSFET can operate efficiently in high-frequency switching mode and is suitable for current switching in DC-DC converters. Due to its low on-resistance and low switching loss, it can significantly improve conversion efficiency and reduce heat generation, especially in miniaturized power supply equipment, reducing system volume and power consumption.

5. **Home appliances and consumer electronics**: In home appliances (such as TVs, stereos, LED lighting systems) and consumer electronic devices (such as smartphones, tablets, and mobile power supplies), the SI4501ADY-T1-E3-VB can be used as a high-efficiency switching element to provide stable power transmission and low energy loss, optimizing the operating efficiency and endurance of the equipment.

6. **Electric vehicles (EVs) and solar inverters**: In electric vehicles and solar inverters, the SI4501ADY-T1-E3-VB can be used for battery voltage conversion, battery protection, and load regulation. Its efficient power switching capability can help achieve more stable and efficient power management, improve the endurance of electric vehicles, and improve the power conversion efficiency of solar inverters.

7. **High-efficiency electric drive system**: For electric drive systems (such as electric scooters, electric bicycles, power tools, etc.), SI4501ADY-T1-E3-VB provides efficient current switching control, optimizes power conversion and transmission in electric drive systems, reduces heat loss, extends battery life, and improves system performance.

8. **Automotive electronics**: In automotive electronic systems, this MOSFET can be used for electric vehicle battery management, on-board power converters, load switches, and electric drive control systems. Its efficient switching characteristics can improve the energy efficiency of automotive electrical systems, reduce power waste, and improve system stability and reliability.

Through these applications, SI4501ADY-T1-E3-VB demonstrates its wide applicability in high-efficiency power switching, low-energy systems, and high-frequency power management, and is particularly suitable for a variety of power supplies and battery-driven devices that need to manage both positive and negative currents.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat