Product introduction：
Product Introduction: SI4467DY-T1-E3-VB
SI4467DY-T1-E3-VB is a high-efficiency unipolar P-channel MOSFET packaged in SOP8. It is designed with Trench technology and is suitable for low-voltage and high-efficiency applications. This MOSFET has low on-resistance, large current carrying capacity and fast switching characteristics. Its maximum drain-source voltage (VDS) is -30V, the gate-source voltage (VGS) can reach up to ±20V, and the gate-source turn-on voltage (Vth) is -2.5V. The on-resistance (RDS(ON)) of the MOSFET is 15mΩ at VGS=4.5V and 11mΩ at VGS=10V, which can significantly reduce current loss and improve system efficiency. The maximum leakage current (ID) is -13.5A, which is suitable for high-current and low-voltage power management, load switching, drive control and other fields.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-2.5V |
-13.5A |
|
|
11mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-2.5V |
-13.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-2.5V |
-13.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package form**: SOP8
- **Configuration**: Unipolar P-type channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source turn-on voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS=4.5V
- 11mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -13.5A
- **Technology type**: Trench technology (low conduction loss, optimized switching performance)
- **Applicable temperature range**: Typically -55°C to +150°C (please refer to the datasheet for details)
Domain and module applications：
Application fields and module examples:
1. **DC-DC converter**:
SI4467DY-T1-E3-VB is suitable for DC-DC converters, especially buck converters and boost converters. In these power management systems, it can reduce switching losses and improve conversion efficiency as a switching element. Its low on-resistance and high current carrying capacity make it very efficient in low-voltage, high-current power systems, suitable for mobile phone chargers, battery-powered devices, etc.
2. **Load switch and power management**:
In power management systems, SI4467DY-T1-E3-VB can provide stable current switching functions as a load switch element, and is widely used in load control of various low-power power supplies. Its fast switching and low on-resistance make it perform well in high-frequency power management modules, suitable for power modules of computers, communication equipment, etc.
3. **Battery management and protection circuit**:
In battery management systems, especially lithium battery protection circuits, SI4467DY-T1-E3-VB can be used as a switching element to control the battery charging and discharging process. Its low RDS(ON) value and large leakage current capability can ensure that the battery remains stable during charging and discharging, extending battery life and reducing power loss.
4. **Motor drive system**:
In motor control systems, SI4467DY-T1-E3-VB is often used in the drive module of DC motors. As a P-channel MOSFET, it controls the current flow of the motor and has the advantages of fast response and low energy loss. This makes it very suitable for applications such as power tools, automation equipment, and electric toys.
5. **Automotive electronics applications**:
In automotive electronics systems, especially in battery management systems and on-board power management modules in electric vehicles (EV) or hybrid electric vehicles (HEV), the SI4467DY-T1-E3-VB can be used as a switching element for battery charging, discharging and protection control. Its efficient performance can improve the energy efficiency of the system and reduce power loss, meeting the high requirements of the automotive industry for power management.
6. **Portable devices**:
In portable electronic devices, the SI4467DY-T1-E3-VB is suitable for battery-powered modules due to its low on-resistance and large current carrying capacity. Whether it is a portable audio, mobile power bank, or power management system for other portable devices, this MOSFET can effectively manage battery power, reduce heat and improve working efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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