Product introduction：
Product Introduction
**SI4463DY-T1-E3-VB** is a high-efficiency P-Channel MOSFET that uses advanced Trench technology and is packaged in SOP8. This MOSFET has a maximum drain-source voltage (V_DS) of -20V and is suitable for low to medium voltage power control applications. Its threshold voltage (V_th) is -0.6V and has a low on-resistance of 21mΩ and 15mΩ at V_GS = 2.5V and V_GS = 4.5V, respectively, ensuring low power consumption and high-efficiency current transfer characteristics.
**SI4463DY-T1-E3-VB** has a maximum drain current (I_D) of -13A, which can withstand large currents and is suitable for power control, load switches and battery management systems that require large current carrying capacity. Due to its low on-resistance and good thermal performance, this MOSFET is suitable for a variety of power supplies and control circuits, providing high-efficiency and low-power loss solutions, and is widely used in battery-powered devices, DC-DC converters, electric motor drives and other fields.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
21mΩ |
|
|
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-20V |
|
-0.6V |
-13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: SI4463DY-T1-E3-VB
- **Package**: SOP8
- **Configuration**: Single P-type MOSFET (Single-P-Channel)
- **Drain-source voltage (V_DS)**: -20V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -0.6V
- **On-resistance (R_DS(ON))**:
- 21mΩ @ V_GS = 2.5V
- 15mΩ @ V_GS = 4.5V
- **Maximum drain current (I_D)**: -13A
- **Technology**: Trench (deep trench technology)
- **Maximum power dissipation (P_d)**: 45W
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Applicable fields and modules
1. **Power management system**
**SI4463DY-T1-E3-VB** is widely used in the field of power management, especially in low-voltage DC-DC converters and battery management systems (BMS). In these applications, MOSFET provides efficient switching performance, and low on-resistance helps reduce power loss and improve system efficiency. Its ability to operate at low voltage and high current carrying capacity makes it very suitable for battery-powered devices and low-power power systems.
2. **Load switch and battery protection circuit**
In the load switch and battery protection circuit, **SI4463DY-T1-E3-VB**'s low on-resistance and high current capability enable it to effectively control the current flow and protect the battery from adverse working conditions such as overcurrent and overvoltage. It can be used in mobile devices and portable battery-powered systems to switch the connection between loads and batteries, providing safe and reliable power management and battery protection.
3. **Electric Motor Drive System**
**SI4463DY-T1-E3-VB** performs well in electric motor drive systems, especially in DC motor control, power tools, automation equipment and other fields. It can handle currents up to -13A and has low on-resistance, which can reduce power loss when driving the motor and improve the efficiency and response speed of the electric motor.
4. **Automotive Electronics and Intelligent Control Systems**
This MOSFET is also very suitable for use in automotive electronic equipment, especially in power management systems, intelligent control units and on-board battery management systems (BMS). In these applications, **SI4463DY-T1-E3-VB** can be used to control battery power and battery protection, optimize energy use and improve the endurance of electric and smart cars.
5. **Consumer electronics and smart home**
In consumer electronics and smart home devices, **SI4463DY-T1-E3-VB** can be used in various low-voltage power management and control applications, such as smart sockets, LED drive circuits, sensor modules, etc. This MOSFET provides fast switching response and low conduction loss, which is very suitable for power management and load control in smart home systems, helping to improve the energy efficiency of equipment and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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