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SI4396DY-T1-E3-VB Product details

Product introduction:

**Product Introduction:**

SI4396DY-T1-E3 is a single N-channel MOSFET in SOP8 package, designed for efficient power management and switching circuits. Its maximum drain-source voltage (VDS) is 30V, and the gate-source voltage (VGS) can withstand a maximum of ±20V, which is suitable for medium and low voltage power switching applications. The MOSFET has a low on-resistance of 8mΩ at VGS=10V and 11mΩ at VGS=4.5V, ensuring low power loss and good current transfer efficiency, with a maximum leakage current of 13A. With its Trench technology, the MOSFET is able to provide higher switching efficiency and lower conduction losses, making it an ideal choice for power management, power regulation and high-frequency switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
**Detailed parameter description: **
- **Model**: SI4396DY-T1-E3
- **Package**: SOP8
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 13A
- **Technology**: Trench technology

Domain and module applications:

**Applicable fields and modules:**

1. **DC-DC converter:**
SI4396DY-T1-E3 MOSFET has very low on-resistance and is suitable for DC-DC converters. Its low RDS(ON) can effectively reduce energy loss and ensure higher conversion efficiency, especially suitable for the conversion of power supply voltages such as 5V and 12V. It is widely used in power adapters, battery chargers and embedded system power supplies, especially in high-efficiency power conversion, which can achieve lower power consumption and higher stability.

2. **LED driver power supply:**
In LED driver power supply, SI4396DY-T1-E3 MOSFET as a switching element can provide efficient power management, especially in high-frequency switching operations with very low conduction losses. This makes it very suitable for various LED lighting systems, such as indoor lighting, backlight sources, and billboards. It can not only reduce energy loss, but also reduce heating problems and improve system reliability and life.

3. **Motor drive and control:**
In the motor drive system, SI4396DY-T1-E3 MOSFET is suitable for driving DC motors or brushless DC motors (BLDC motors) with its high current carrying capacity (maximum 13A) and low on-resistance. It can provide efficient and stable motor control performance and is widely used in power tools, electric bicycles, home appliances, robots and other fields to ensure efficient operation of the motor and reduce energy loss.

4. **Battery Management System (BMS):**
SI4396DY-T1-E3 is also important in battery management systems (BMS). This MOSFET can support currents up to 13A and is suitable for switch control during battery charging and discharging. Its low on-resistance can reduce energy loss in the battery management process and improve charging and discharging efficiency. It is widely used in electric vehicles, portable devices and large-scale energy storage systems.

5. **Intelligent Power Management System:**
In intelligent power management systems, the low on-resistance and high current carrying capacity of SI4396DY-T1-E3 MOSFET make it an ideal power switch element, especially suitable for applications of efficient power regulation and power conversion. Whether in home energy management systems, intelligent traffic control systems or industrial automation, this MOSFET can provide efficient power conversion and management, ensuring stable operation of the system and improving energy utilization.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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