Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description:
- **Model**: SI4394DY-T1-E3
- **Package type**: SOP8
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 30V (max)
- **Gate-source voltage (VGS)**: ±20V (max)
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power dissipation**: TBD (depends on heat dissipation conditions)
- **Thermal resistance**: < 45°C/W (junction to heat sink)
Domain and module applications：
3. Application fields and module examples:
# 1. **Power management system**:
SI4394DY-T1-E3 is suitable for efficient power management systems, especially in scenarios that require high current and low power consumption. The low on-resistance and high current carrying capacity of this MOSFET make it an ideal choice for DC-DC converters, battery management systems (BMS), power adapters, and other power supply systems. In these applications, it can effectively reduce power consumption, improve efficiency, and ensure high stability of the system.
# 6. **High-efficiency LED drive system**:
Due to its low on-resistance, SI4394DY-T1-E3 is also suitable for high-efficiency LED drive systems. Whether in applications such as indoor lighting, street lighting, or stage lighting, this MOSFET can effectively provide current drive to ensure long life and high efficiency performance of LED systems. In these applications, SI4394DY-T1-E3 ensures high efficiency and stability of the system by reducing heat and energy loss.
# 7. **Computer and communication equipment power supply**:
SI4394DY-T1-E3 is also used in computer power supplies (such as ATX power supplies) and communication equipment. It can provide voltage regulation to ensure the stability and efficiency of the equipment power supply. In systems with high power requirements such as data centers, servers, and network communication equipment, this MOSFET can optimize overall performance through low-power, high-efficiency power conversion.
Summary:
SI4394DY-T1-E3 is an N-type MOSFET with ultra-low on-resistance and high current handling capability, suitable for a wide range of high-efficiency power management and power conversion applications. With its excellent performance, it can effectively reduce energy loss, improve system efficiency, and is suitable for battery management, power tools, power conversion, automotive electronics and other fields. This makes SI4394DY-T1-E3 an ideal choice for high-power, low-power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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