Product introduction:
SI4388DY-T1-E3-VB MOSFET Product Introduction
**SI4388DY-T1-E3-VB** is an **N-Channel MOSFET**, using **SOP8** package, configured as **Half-Bridge-N+N-Channel** structure, with **30V** maximum drain-source voltage (V_DS) and **±20V** gate-source voltage (V_GS). This MOSFET uses **Trench** technology, with very low on-resistance: **R_DS(ON)** is **12mΩ** (V_GS = 4.5V) and **8mΩ** (V_GS = 10V), and has a high current handling capability, **I_D** is **8A**. The threshold voltage (V_th) is **1.7V**, enabling it to work effectively at a lower gate voltage.
**SI4388DY-T1-E3-VB** is an ideal MOSFET designed for high-efficiency switching power supplies, DC-DC converters, and other power management applications that require low conduction losses and high switching frequencies. Its structure and characteristics make it very suitable for use in half-bridge drive circuits, power converters, and current control systems.
File download
Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
|
|
SI4388DY-T1-E3-VB MOSFET detailed parameter description
| **Parameter** | **Description** |
|-------------------------|----------------------------------------------------|
| **Package** | SOP8 |
| **Configuration** | Half-Bridge N+N-Channel |
| **Drain-Source Voltage (V_DS)** | 30V |
| **Gate-Source Voltage (V_GS)** | ±20V |
| **Threshold Voltage (V_th)** | 1.7V |
| **On-Resistance (R_DS(ON))** | 12mΩ (V_GS = 4.5V)
8mΩ (V_GS = 10V) |
| **Drain Current (I_D)** | 8A |
| **Technology** | Trench (trench technology) |
Domain and module applications:
SI4388DY-T1-E3-VB MOSFET Applications and Module Examples
**1. Half-bridge and Full-bridge Power Converters**
- **SI4388DY-T1-E3-VB**'s **half-bridge N+N-Channel** configuration is ideal for **half-bridge power converters** (Half-Bridge DC-DC converter) and **full-bridge power converters**. Its low on-resistance and high switching frequency characteristics enable it to provide efficient current regulation and low-power conversion in these power conversion circuits, and is widely used in tasks such as **voltage conversion** and **current regulation**.
**2. Power Tools and Drive Circuits**
- In **power tools** and **electric drive circuits**, SI4388DY-T1-E3-VB is able to handle high currents and effectively control the switching of motors. Its low on-resistance reduces power loss during system operation and allows stable operation under high load conditions, making it particularly suitable for **power tool drivers**, **electric curtain drivers**, and **electric door control systems**.
**3. Battery Management and Power Distribution Systems**
- This MOSFET is also widely used in **battery management systems** (BMS) and **power distribution systems** (PDU), especially in scenarios where high-efficiency current regulation is required. It can provide accurate current control in **battery charge and discharge management**, support efficient switching of large currents, and ensure stable system operation.
**4. High-frequency power management**
- **SI4388DY-T1-E3-VB** In **high-frequency power management** systems, especially for **DC-DC converters** and **AC-DC adapters**, it can switch efficiently at high frequencies, reduce energy losses, and increase power density. Its low on-resistance and high-speed switching characteristics make it an excellent performer in high-frequency devices such as **power adapters** and **wireless routers**.
**5. Inverters and Energy Systems**
- In **inverters** and **energy conversion systems**, **SI4388DY-T1-E3-VB** can be used as a core switching element to effectively convert DC to AC through a half-bridge configuration. In solar, wind and other renewable energy systems, this MOSFET can improve energy efficiency, ensure system stability and reliability, and is suitable for **solar inverters** and **wind generators**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours