Product introduction：
1. **Product Introduction: SI4364DY-T1-E3-VB MOSFET**
SI4364DY-T1-E3-VB is a single N-channel MOSFET in SOP8 package, designed for high-efficiency power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the maximum gate-source voltage (VGS) is ±20V, the threshold voltage (Vth) is 1.7V, and it has extremely low on-resistance (RDS(ON)). At VGS=4.5V, RDS(ON) is 5mΩ; at VGS=10V, RDS(ON) is 4mΩ, which enables the device to provide extremely low switching losses and efficient power transmission. The maximum drain current (ID) is 18A, which is suitable for applications requiring high current drive and low power consumption. Manufactured using Trench technology, it has excellent thermal performance and low conduction losses. This MOSFET is widely used in DC-DC converters, load switches, battery management systems, and other power management fields that require high efficiency and low power consumption.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
2. **Detailed parameter description:**
- **Model**: SI4364DY-T1-E3-VB
- **Package**: SOP8
- **Configuration**: Single N-Channel MOSFET (Single-N-Channel)
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ (VGS = 4.5V)
- 4mΩ (VGS = 10V)
- **Maximum leakage current (ID)**: 18A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Application areas**: DC-DC converters, load switches, battery management systems, automotive electronics, consumer electronics, communication equipment, etc.
Domain and module applications：
3. **Application Examples:**
SI4364DY-T1-E3-VB MOSFET is suitable for a variety of high-efficiency power management and switching applications due to its ultra-low RDS(ON), high current carrying capacity and efficient switching characteristics. The following are some typical application areas of this product:
- **DC-DC Converter**: SI4364DY-T1-E3-VB performs well in DC-DC converters, especially in power conversion in low voltage (such as 5V, 12V) systems. Low on-resistance ensures high-efficiency power conversion and is suitable for use in mobile devices, portable power modules, and industrial power systems. It can significantly reduce power consumption and improve the overall efficiency of the power supply, extending battery life.
- **Load Switch**: Due to its high current carrying capacity (maximum 18A), SI4364DY-T1-E3-VB is very effective in load switch applications, especially in battery management systems (BMS) and portable devices. As a load switching switch, it can provide stable current switching, protect equipment from overcurrent damage, and improve battery management efficiency.
- **Battery Management System (BMS)**: SI4364DY-T1-E3-VB is widely used in battery management systems, especially in power tools, electric vehicles, and energy storage systems. Low RDS(ON) values help reduce heat loss, improve battery charging and discharging efficiency, and ensure that the battery operates stably within a safe voltage and current range.
- **Consumer Electronics**: In smartphones, tablets, and other portable devices, SI4364DY-T1-E3-VB MOSFET is often used in power management systems, responsible for efficient battery charging and discharging control. Its low power consumption and efficient switching characteristics are very suitable for electronic products that require long working hours and battery life is critical.
- **Automotive Electronics**: This MOSFET is also suitable for automotive electronic systems, such as battery management, power control, and energy recovery systems in electric vehicles. SI4364DY-T1-E3-VB can be used as a switching element to provide efficient power conversion, ensuring efficient operation and long life of automotive systems.
- **Communication equipment**: In communication base stations, routers, fiber-optic communication equipment and other fields, SI4364DY-T1-E3-VB MOSFET is used in power management systems. Its high efficiency and low switching loss enable these devices to operate stably for a long time, support high-load operation, and provide excellent thermal management.
With its low RDS(ON), high current carrying capacity and excellent thermal performance, SI4364DY-T1-E3-VB MOSFET is an ideal choice for low-voltage power management, switching power supplies, load switches and other fields, and can provide excellent efficiency and performance in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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