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SI4362BDY-T1-E3-VB Product details

Product introduction:

SI4362BDY-T1-E3-VB MOSFET Product Introduction

**SI4362BDY-T1-E3-VB** is an **N-Channel MOSFET**, using **SOP8** package, with **30V** maximum drain-source voltage (V_DS) and **±20V** gate-source voltage (V_GS). This MOSFET adopts **Trench** technology and has extremely low on-resistance, **R_DS(ON)** is only **5mΩ** (V_GS = 4.5V) and **4mΩ** (V_GS = 10V). Its maximum drain current (I_D) is **18A**, and it has a **1.7V** threshold voltage (V_th), which can provide efficient switching performance at a lower gate voltage.

**SI4362BDY-T1-E3-VB** is suitable for high-efficiency power management, switching power supplies, load switches, and applications requiring fast response and low power loss. Its excellent conductivity and high switching frequency enable efficient current control and power management in a variety of electronic devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 18A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
SI4362BDY-T1-E3-VB MOSFET Detailed parameter description

| **Parameter** | **Description** |
|-------------------------|----------------------------------------------------|
| **Package** | SOP8 |
| **Configuration** | Single N-Channel |
| **Drain-Source Voltage (V_DS)** | 30V |
| **Gate-Source Voltage (V_GS)** | ±20V |
| **Threshold Voltage (V_th)** | 1.7V |
| **On-Resistance (R_DS(ON))** | 5mΩ (V_GS = 4.5V)
4mΩ (V_GS = 10V) |
| **Drain Current (I_D)** | 18A |
| **Technology** | Trench (trench technology) |

Domain and module applications:

SI4362BDY-T1-E3-VB MOSFET Applications and Module Examples

**1. High-efficiency Switching Power Supplies (SMPS) **
- Due to its low on-resistance and high current handling capability, **SI4362BDY-T1-E3-VB** is widely used in **high-efficiency switching power supplies** (SMPS). It is suitable for applications such as **DC-DC converters**, **AC-DC power adapters**, and **inverters**. Its low on-resistance can effectively reduce power losses and improve energy efficiency, especially for systems that require high switching frequencies and high currents, which can reduce heat generation while improving conversion efficiency.

**2. Battery Management Systems (BMS) **
- **SI4362BDY-T1-E3-VB** is widely used in **Battery Management Systems** (BMS) due to its high current capability and low on-resistance. In electric vehicles (EVs) and portable devices, MOSFETs help to efficiently manage the battery charging and discharging process, provide fast switching and optimize battery performance. In particular, they have excellent application performance in battery charging, discharging and battery overload protection, helping to extend battery life and ensure safety.

**3. Load Switch**
- The fast response and low on-resistance of this MOSFET make it very effective in **load switch** applications. In various consumer electronics, home appliances and industrial control equipment, **SI4362BDY-T1-E3-VB** can efficiently switch high-current loads with low power consumption, ensuring low loss and high stability of the system during switching. It is widely used in **power tools**, **LED drivers** and **electric appliances** and other fields.

**4. Power Supply Voltage Regulation and Current Regulation**
- In **power supply voltage regulation** and **current regulation** applications, **SI4362BDY-T1-E3-VB** provides efficient current regulation as a switching element, suitable for various high-efficiency power supply designs. It can support high-frequency switching operation, ensure stable output voltage during regulation, and is widely used in **high-frequency power converters** and **voltage-stabilized power modules**.

**5. High-frequency power management and system integration**
- Due to its efficient switching characteristics and low on-resistance, **SI4362BDY-T1-E3-VB** is also widely used in **high-frequency power management systems**. It can process high-frequency signals and reduce power loss, and is suitable for communication equipment, radio transmitters, radio frequency equipment and other occasions requiring high-frequency power control.

**Summary: **
**SI4362BDY-T1-E3-VB** is an efficient **N-Channel MOSFET**, suitable for high-efficiency power management fields such as switching power supplies, battery management systems, load switches and power supply voltage regulation. With its low on-resistance, fast response and high current carrying capacity, it can significantly improve system performance and reduce heat generation. It is an ideal choice for power management and high-efficiency current regulation systems, and is widely used in various high-power and high-frequency electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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