Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
**Detailed parameter description: **
- **Model**: SI4214DY-T1-GE3
- **Package**: SOP8
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 8.5A
- **Technology**: Trench technology
Domain and module applications：
**Applicable fields and modules:**
1. **DC-DC converter**:
SI4214DY-T1-GE3 MOSFET's low on-resistance and good current carrying capacity make it very suitable for efficient switching in DC-DC converters. It provides stable performance in power supply designs with high conversion efficiency and is suitable for applications such as automotive power supplies, industrial power adapters, and LED driver power supplies.
2. **Motor drive and control**:
In motor drive systems, SI4214DY-T1-GE3 MOSFET can be used as a switching element for the motor, providing low on-resistance, reducing power loss, and effectively improving the drive efficiency of the motor. This makes it very suitable for applications such as power tools, home appliances, and automation equipment.
3. **LED lighting driver power supply**:
Due to its excellent switching performance and low RDS(ON), SI4214DY-T1-GE3 is suitable for LED driver power supplies. It can maintain low losses under high-frequency switching, ensuring that LED lamps work efficiently and stably during use. This feature is very important in LED bulbs, backlights, and other energy-saving lighting fields.
4. **Battery Management System (BMS)**:
In the battery management system (BMS), SI4214DY-T1-GE3 MOSFET can be used as a switching element during battery charging and discharging. Its maximum current carrying capacity is 8.5A, which is suitable for use in applications that require medium current control, helping to ensure that the battery charging and discharging process is efficient and safe, and extending battery life.
5. **Portable Electronic Device Power Management**:
Due to its SOP8 small package and high efficiency, SI4214DY-T1-GE3 is suitable for power management modules of portable devices such as mobile power supplies, tablets, electric toys, portable audio, etc. In these devices, this MOSFET can efficiently convert power and provide stable power output.
6. **Intelligent Power System and Power Regulation**:
This MOSFET also has application potential in intelligent power systems, especially in power regulation modules that require efficient switching. For example, in smart homes, intelligent transportation systems, and high-efficiency power modules, the dual N-channel structure of SI4214DY-T1-GE3 provides better power control and regulation performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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