Product introduction：
1. Product Introduction: SI4210DY-T1-E3
SI4210DY-T1-E3 is a dual N-type MOSFET in SOP8 package, designed based on Trench technology, optimized for high-efficiency power conversion and current switching applications. This product supports high current loads, has low on-resistance, and is suitable for various power management systems. Its maximum drain-source voltage (VDS) is 30V, and its maximum drain current (ID) is 6.8A/6.0A, which is suitable for various low-voltage, high-current electronic applications. SI4210DY-T1-E3 provides an extremely low RDS(ON) value, which can maintain low power consumption and low heat loss at higher currents, and is suitable for wide application in power modules, drive circuits and battery management systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
2. Detailed parameter description:
- **Model**: SI4210DY-T1-E3
- **Package type**: SOP8
- **Configuration**: Dual N-type MOSFET
- **Drain-source voltage (VDS)**: 30V (max)
- **Gate-source voltage (VGS)**: ±20V (max)
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS = 4.5V
- 22mΩ @ VGS = 10V
- **Maximum drain current (ID)**:
- 6.8A (channel 1)
- 6.0A (channel 2)
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package**: SOP8 (Surface Mount Package)
- **Number of Pins**: 8 Pins
- **Thermal Resistance**: < 45°C/W (Junction to Heatsink)
Domain and module applications：
3. Application fields and module examples:
# 1. **Power management and conversion modules**:
SI4210DY-T1-E3 performs well in power management systems, especially in DC-DC converters, power regulators and voltage stabilization circuits. Due to its ultra-low on-resistance and high drain current, it can achieve low-power operation and reduce heat loss in high-efficiency conversion. This product is suitable for miniaturized power adapters, high-efficiency power modules, and power supply applications for low voltage (within 30V).
# 6. **Computer and server power management**:
SI4210DY-T1-E3 is also very suitable for computer power supply, server power supply and data center applications. It can be used in high-efficiency power conversion, voltage stabilization modules, current switching and other modules to ensure stable operation under high current loads while reducing system power consumption. Especially when dealing with high loads and frequent switching, this MOSFET reduces energy loss and improves system efficiency with its low on-resistance characteristics.
# 7. **Wireless communication equipment**:
In wireless communication systems, SI4210DY-T1-E3 can also be used in power amplifiers and signal modems. Its high current carrying capacity makes it suitable for signal processing and power control modules, ensuring that wireless communication equipment can operate stably at high frequencies and high currents, and keep power consumption and heat generation low.
# 8. **Automotive electronics applications**:
SI4210DY-T1-E3 can also be used in automotive electronics, such as on-board power supplies, on-board control modules, and electric window systems. It can withstand high currents and frequent switching operations, ensuring efficient and stable operation of automotive batteries and power systems.
Summary:
SI4210DY-T1-E3 is suitable for a variety of fields, including power management, battery management, power tools, smart homes, automotive electronics, and communication equipment, due to its excellent conduction performance, low on-resistance, and high current handling capability. It can efficiently handle large current loads, reduce energy loss, and improve system performance. It plays an important role in many high-current, high-frequency switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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