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SI4164DY-T1-E3-VB Product details

Product introduction:

**Product Introduction:**
SI4164DY-T1-E3 is a single N-channel MOSFET in SOP8 package with low on-resistance and excellent current carrying capacity, which is very suitable for high-efficiency switching power supply and power management applications. Its maximum drain-source voltage (VDS) is 30V, and the gate-source voltage (VGS) can operate in the range of ±20V, with extremely low on-resistance: 3mΩ at VGS=10V and 4mΩ at VGS=4.5V. This MOSFET is suitable for applications that require fast switching and high efficiency, such as DC-DC converters, motor drives, LED lighting, and portable device power supplies.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 25A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 25A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 25A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
**Detailed parameter description: **
- **Model**: SI4164DY-T1-E3
- **Package**: SOP8
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 25A
- **Technology**: Trench technology

Domain and module applications:

**Applicable fields and modules:**

1. **DC-DC converter**:
SI4164DY-T1-E3's low on-resistance and high current carrying capacity make it very suitable for use in high-efficiency DC-DC converters. Its operating voltage range is 30V, which can support common conversion requirements such as 5V, 12V, and 24V. The low RDS(ON) performance of this MOSFET ensures smaller energy loss and lower heat generation, greatly improving the conversion efficiency, and is suitable for power adapters, switching power supply modules, etc.

2. **Motor drive**:
The high current carrying capacity and low on-resistance of this MOSFET make it perform well in motor drive applications, especially for low-voltage DC motor control. Its high efficiency and fast switching capability help improve the overall efficiency and response speed of the motor drive system.

3. **LED drive**:
In LED lighting drive systems, SI4164DY-T1-E3 can be used to provide efficient switching functions. The low on-resistance of the MOSFET enables it to reduce power loss and maintain low heat rise at high-frequency switching, ensuring stable operation of LED lamps. This makes it ideal for use in LED bulbs, LED strip lights, and other high-efficiency lighting systems.

4. **Portable Electronic Device Power Management**:
Due to its compact SOP8 package and efficient performance, the SI4164DY-T1-E3 can be widely used in the power management of portable electronic devices such as smartphones, tablets, portable speakers, etc. It can efficiently convert power and ensure that the system will not cause performance problems due to overheating or inefficiency during use.

5. **Battery Management System (BMS)**:
In the battery management system (BMS), the SI4164DY-T1-E3 can be used for current switching during charging and discharging. It is capable of carrying currents up to 25A and provides a current path with low on-resistance, ensuring that the battery is more efficient and safe during charging and discharging. The application of this MOSFET helps to extend battery life and improve system stability.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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